Publications by Alessandro Pezzotta

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fab ...

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key pa ...

In this paper a continuous-time low-pass analog filter based on the Cascoded Super Source Follower (C-SSF) architecture, implemented in a 28-nm bulk CMOS process, is presented. The target application is the transceiver analog baseband for the next-generati ...

This paper presents the simplified charge-based EKV MOSFET model and shows that it can be used for advanced CMOS processes despite its very few parameters. The concept of inversion coefficient is then presented as an essential design parameter that spans t ...

In this paper, we propose an accurate method to extract the free carrier mobility in FETs. This derivation relies only on the drift-diffusion transport model without the need to predefine the gate-voltage-mobility dependence. This approach has been assesse ...

Alessandro Pezzotta

Chat with Graph Search

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

A 49 mu W 6th-Order Chebyshev SSF-based Low-Pass Analog Filter for IEEE 802.11ax

Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits

Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits

Carrier Mobility Extraction in FETs

Analysis of power consumption in LC oscillators based on the inversion coefficient

Linear analysis of phase noise in LC oscillators in deep submicron CMOS technologies

Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter