Publications by Elison de Nazareth Matioli

Related publications (117)

Nanoplasma-enabled picosecond switches for ultrafast electronics

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera, Minghua Zhu, Giovanni Santoruvo

The broad applications of ultrawide-band signals and terahertz waves in quantum measurements, imaging and sensing techniques, advanced biological treatments, and very-high-data-rate communications have drawn extensive attention to ultrafast electronics. In ...

2020

Electronic metadevices for terahertz applications

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Alessandro Floriduz, Mehdi Naamoun

The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of d ...

AMER CHEMICAL SOC2021

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

IEEE2020

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

In this paper, a high step-up magnetic-less DC/DC nX converter is designed and experimentally evaluated. GaN transistors are applied in a nX converter topology, yielding ultrahigh power density and high conversion efficiency. The absence of magnetic materi ...

IEEE2019

Parallel PV Configuration with Magnetic-Free Switched Capacitor Module-Level Converters for Partial Shading Conditions

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

In this paper, a module-level photovoltaic (PV) architecture in parallel configuration is introduced for maximum power extraction, under partial shading (PS) conditions. For the first time, a non-regulated switched capacitor (SC) nX converter is a used at ...

2021

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

The important distinction between stored energy and co-energy components of the output capacitance of field-effect transistors (FETs) is not explicitly discussed in the literature, and hence, less understood in relation to the switching losses in power ele ...

IEEE2020

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

Mihai Adrian Ionescu, Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani, Riyaz Mohammed Abdul Khadar, Pirouz Sohi

The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...

IEEE2022

Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO2 Valorization

Önder Soydal, Elison de Nazareth Matioli, Jeremy Luterbacher, Guang-Yu Sun, Hongkeng Zhu, Bartu Karakurt

Valorizing CO2 into chemical building blocks via efficient electrified processes could significantly decrease carbon emissions. In this work, a device that allows generation of tunable micro‐plasma modes (arc, pulsed, pulsed arc) on a chip for efficient, l ...

Wiley2025

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

AIP American Institute of Physics2021

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

Elison de Nazareth Matioli, Armin Jafari, Luca Nela, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

Resonant-type power converters are supposed to generate zero switching losses during soft-switching operation. In recent research, unexpected switching losses were reported in these converters, which were attributed to a large-signal hysteresis observed in ...

IEEE2020

Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

High-frequency switching is favorable for fast transient response, small size of passive components and superior power density, especially in soft-switching topologies. At high frequencies, power dissipation due to consecutive charging/discharging of gate ...

IEEE2020

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Hongkeng Zhu

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

In-Plane-Gate GaN Transistors for High-Power RF Applications

Elison de Nazareth Matioli, Giovanni Santoruvo

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

Institute of Electrical and Electronics Engineers2017

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

In this work, we demonstrate a state-of-the-art high step-up/down dual-active-bridge (DAB) converter designed with GaN transistors, to achieve a high efficiency and large power-density. A quasi-planar matrix transformer with high step-up/down ratio is demo ...

2020

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

Elison de Nazareth Matioli, Armin Jafari

In this work, we present a new device concept for compact high-voltage sensing with high-impedance input port, consisting of an AlGaN/GaN high-electron-mobility channel controlled by trapped carriers generated by a metallic electrode. The high-voltage appl ...

Institute of Electrical and Electronics Engineers2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Taifang Wang, Giovanni Santoruvo

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera, Halil Kerim Yildirim

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

IEEE2021