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Elison de Nazareth Matioli

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Related publications (117)

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Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

Marco Mattavelli, Elison de Nazareth Matioli, Georgios Kampitsis

In this article, a soft-switched nonisolated high step-up multi-input dc-dc converter is proposed. The proposed converter has overcome the hard switching problem of the conventional boost three port converter (boost-TPC) by providing zero-voltage-switching ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Efficient Microchannel Cooling of Multiple Power Devices with Compact Flow Distribution for High Power-Density Converters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

In this work, we describe a new approach for compact and energy-efficient cooling of converters where multiple miniaturized microfluidic cold-plates are attached to transistors providing local heat extraction. The high pressure drop associated with microch ...

2020

Semiconductor devices with multiple channels and three-dimensional electrodes

Elison de Nazareth Matioli, Jun Ma

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

2018

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of n ...

Institute of Electrical and Electronics Engineers2022

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Riyaz Mohammed Abdul Khadar, Minghua Zhu

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors se ...

Institute of Electrical and Electronics Engineers2021

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Andras Kis, Andreas Schueler, Elison de Nazareth Matioli, Anna Krammer, Mohammad Samizadeh Nikooytabalvandani, Philip Johannes Walter Moll, Reza Soleiman Zadeh Ardebili, Guilherme Migliato Marega

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

Nature Research2022

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

Wide-band-gap (WBG) power semiconductor devices are gaining an increasing interest in power circuits, as they exhibit a low specific ON-resistance (RON) while providing a high blocking voltage. The energy dissipation corresponding to resonantly charging an ...

IEEE2020

Investigation of Dynamic RON in p-GaN Gate HEMTs under Steady-State Soft-Switching: Roles of OFF-State Trapping and Hole Injections

Elison de Nazareth Matioli, Hongkeng Zhu

Dynamic ON-resistance (RON) in GaN HEMTs is a critical issue for power electronics efficiency. This paper proposes a novel method to measure dynamic (RON) under long-term OFF-state drain-stress and steady-state soft-switching, comparing Schottky-type (GaN- ...

IEEE2025

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili

For certain field-effect transistors (FETs) in soft-switching operation, the large-signal behavior of their output capacitance ( Co ) has shown to deviate considerably from the datasheet values. This can have a significant effect on hard-switching losses i ...

2021

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Catherine Erine, Halil Kerim Yildirim

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Reza Soleiman Zadeh Ardebili, Enea Figini

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

2020

Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

This work presents a mixed simulation experimental method for efficiency optimization of a modular multilevel switched capacitor DC-DC converter. The results show that the optimal frequency deviates from the circuit's self-resonant frequency, commonly prop ...

IEEE2020

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

Elison de Nazareth Matioli, Georgios Kampitsis

The emergence of wide bandgap power devices has brought the attention back to the flying capacitor (FC) multilevel inverters with a large number of stages, in an effort to increase the power density by minimizing the passive components. The main challenge ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Luca Nela, Mohammad Samizadeh Nikooytabalvandani, Taifang Wang

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger areas ...

IEEE2020

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera

Efficient and compact power conversion is a key requirement to achieve sustainable electrification of our society. GaN-based power devices offer major benefits compared to their silicon counterparts in terms of efficiency and integration but suffer from se ...

IEEE2021