Publications by Chunmin Zhang | EPFL Graph Search

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This article presents the first measurement of the differential Z-boson production cross-section in the forward region using proton-lead collisions with the LHCb detector. The dataset was collected at a nucleon-nucleon centre-of-mass energy of root(NN)-N-s ...

An amplitude analysis of the D+-> (-)pi(+)pi(+) decay is performed with a sample corresponding to 1.5 fb(-1) of integrated luminosity of pp collisions at a centre-of-mass energy root s = 8 TeV collected by the LHCb detector in 2012. The sample contains app ...

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fab ...

We report the measurement of gamma gamma -> eta(c) (1S) -> eta(c) (2S) -> eta'pi(+)pi(-) with eta' decays to gamma rho and eta pi(+)pi(-) using 941 fb(-1) of data collected with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider. The eta(c) ...

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process. ...

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various siz ...

In preterm infants, there is a risk of long-term cognitive, motor and behavioral impairments due to hemorrhagic and/or ischemic lesions. If detected early, lesions can be prevented. A bedside imaging modality, capable of early detection of both disorders, ...

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key pa ...

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity L ...

This paper presents a generalized charge-based EKV MOSFET model that includes the effects of trapped charges in the bulk oxide and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface-trapped charges, the mobile charge d ...

Chunmin Zhang

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Measurement of the Z boson production cross-section in proton-lead collisions at root(NN)-N-s=8.16 TeV

Amplitude analysis of the D+-> pi(-)pi(+)pi(+) decay and measurement of the pi(-)pi(+) S-wave amplitude

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC

Measurement of eta(c) (1S), eta(c)(2S), and nonresonant eta 'pi(+)pi(-) production via two-photon collisions

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Time-Resolved NIROT 'Pioneer' System for Imaging Oxygenation of the Preterm Brain: Preliminary Results

Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

A Generalized EKV Charge-based MOSFET Model Including Oxide and Interface Traps