Publication

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang
2018
Conference Papers

Abstract

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.

Official source

https://infoscience.epfl.ch/entities/publication/5b45908a-ec65-4f38-9407-99534c57e06c

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Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

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