Josua Andreas Stückelberger

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In this thesis, we present the development and characterization of novel approaches to carrier-selective passivating contacts for crystalline silicon (c-Si) solar cells. In our first approach, we benefit from a wide-bandgap material, namely mixed-phase sil ...

We demonstrate the beneficial effect of a pre-annealing step prior to the boron diffusion on passivation and contact resistivity of industrially LPCVD deposited poly-Si/SiOX hole-selective contacts. We investigate the influence of the pre-annealing tempera ...

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

Josua Andreas Stückelberger

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Transparent Passivating Contacts for Front Side Application in Crystalline Silicon Solar Cells

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

A passivating contact concept compatible with a short thermal treatment

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts