A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of layers deposited in one single run by plasma-enhanced chemical vapor deposition. The layers of the stack were tailored to protect the interfacial oxide layer, to act as a source for boron diffusion into the wafer and to connect to the external metallisation with low contact resistivity. We found that this stack tolerated annealing at 900 degrees C over a wide range of dwell times: for 15 min anneals we obtained dark saturation current densities (J(o)) as low as 10 fA center dot cm(-2) (after hydrogenation) and after 12-fold increase of the annealing time to 180 min, J(0) was only increased to 12 fA center dot cm(-2). These values corresponded to implied open circuit voltages (iV(oc)) of 718 and 715 mV, respectively. To test passivating rear contacts under realistic operation conditions, we combined them with an n-type heterojunction into hybrid solar cells. With conversion efficiencies abovementioned 22% and V-oc > 705 mV, these devices demonstrated high level of rear surface passivation. Finally, we demonstrated the integration of the hole selective rear contact with a POCl3 diffusion process. To this end, we added a phosphorus diffusion barrier to our layer stack by depositing one additional layer of amorphous SiOx on top of the stack. For symmetric samples with this layer structure on both sides, we observed iV(oc) values of 714 and 712 mV on n- and p-type silicon wafers after hydrogenation, respectively. Co-diffused cells with POCl3 front diffused emitter and rear passivating contact resulted so far in efficiencies of 20.4% and 20.1% for n- and p-type wafers, respectively.