Luca Francaviglia

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Related publications (24)

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Ale,Ga)N core-shell nanowires

Anna Fontcuberta i Morral, Luca Francaviglia

The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al, Ga) N shell with a larger band gap around the GaN nanowire core is a pr ...

Royal Society of Chemistry2017

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures

Anna Fontcuberta i Morral, Luca Francaviglia

We demonstrate the selective area growth of GaN-(Al,Ga)N core shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. ...

American Chemical Society2016

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Yannik Fontana, Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Léo Duchêne, Sonia Conesa Boj, Federico Matteini, Luca Francaviglia

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, bu ...

American Institute of Physics2015

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Yannik Fontana, Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Eleonora Russo, Luca Francaviglia

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

American Institute of Physics2014

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