Home

Person

Heidi Andrea Potts

This person has left EPFL

About
Privacy
Disclaimer

Graph Chatbot

Related publications (28)

Page 1 of 2

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Anna Fontcuberta i Morral, Martin George Friedl, Wonjong Kim, Heidi Andrea Potts, Jelena Vukajlovic Plestina, Lea Ghisalberti, William Craig Carter

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is nec ...

Nature Research2019

Gold-free Growth of InAs Nanowires : Growth, Structural & Electrical Properties

Heidi Andrea Potts

Semiconductor nanowires are interesting building blocks for a variety of electronic and optoelectronic applications, and they provide an excellent platformto probe fundamental physical effects. For the realization of nanowire based devices, a deep understa ...

EPFL2017

Template-Assisted Scalable Nanowire Networks

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Wonjong Kim, Mahdi Zamani, Lucas Güniat

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of ...

American Chemical Society (ACS)2018

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Heidi Andrea Potts, Sonia Conesa Boj

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Gözde Tütüncüoglu, Heidi Andrea Potts, Federico Matteini, Fauzia Jabeen

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Anna Fontcuberta i Morral, Heidi Andrea Potts, Luca Francaviglia, Jelena Vukajlovic Plestina, Francesca Amaduzzi

Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous s ...

Institute of Physics2017

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Heidi Andrea Potts, Francesca Amaduzzi

Optical-pump terahertz-prohe (OPTP) spectroscopy is a powerful, non-contact tool for extracting the electrical conductivity within a material. In this work, we show how OPTP spectroscopy can he used to extract the temperature-dependent electron mobility an ...

IEEE2019

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Wonjong Kim, Heidi Andrea Potts, Jelena Vukajlovic Plestina, Maxime Lagier

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained ...

2017

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Eleonora Russo, Heidi Andrea Potts, Federico Matteini, Sonia Conesa Boj, Jelena Vukajlovic Plestina, Anna Dalmau Mallorquí

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Heidi Andrea Potts, Federico Matteini, Tao Xu

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

American Chemical Society2015

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Heidi Andrea Potts, Davide Deiana

We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As-4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are o ...

Royal Soc Chemistry2015

Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion

Eleonora Frau, Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Heidi Andrea Potts

Semiconductor nanowires are promising building blocks for next generation solar energy conversion at low cost, due to their large absorption cross-sections. Here, the understanding of their absorption power is explored via computational and experimental me ...

IEEE2016

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Heidi Andrea Potts, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Dmitry Mikulik, William Craig Carter

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran

Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on ( ...

American Chemical Society2017

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Nicholas Paul Morgan

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets ...

Institute of Physics2017

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Heidi Andrea Potts, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Heidi Andrea Potts

Graph Chatbot

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Gold-free Growth of InAs Nanowires : Growth, Structural & Electrical Properties

Template-Assisted Scalable Nanowire Networks

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Questioning liquid droplet stability on nanowire tips: from theory to experiment

Dataset for "Template-assisted scalable nanowire networks"

Imaging Stray Magnetic Field of Individual Ferromagnetic Nanotubes