Publications by Federico Matteini

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The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

Multi-walled carbon nanotubes and graphene nanoflowers were grown by a catalytic chemical vapor deposition process on metal surfaces. Electrodeposition was used as a versatile technique to obtain three different iron catalyst coatings on platinum microelec ...

We successfully demonstrate the plasmonic coupling between metal nanoantennas and individual GaAs nanowires (NWs). In particular, by using dark-field scattering and second harmonic excitation spectroscopy in partnership with analytical and full-vector FDTD ...

In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires ca ...

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

We demonstrate the directional emission of individual GaAs nanowires by coupling this emission to Yagi-Uda optical antennas. In particular, we have replaced the resonant metallic feed element of the nanoantenna by an individual nanowire and measured with t ...

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically s ...

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, bu ...

In this article, the authors propose a novel illumination strategy for light detection and ranging (lidar) systems emitting in the retinal hazard region (400 m

Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter a ...

Federico Matteini

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Growth of GaAs nanowires on Si (111) for photovoltaic applications

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Dataset for "Tuning adatom mobility and nanoscale segregation by twin formation and polytypism"

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Direct growth of nanotubes and graphene nanoflowers on electrochemical platinum electrodes

Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas

Terahertz spectroscopy of modulation doped core-shell GaAs/AlGaAs nanowires

Tuning the response of non-allowed Raman modes in GaAs nanowires

Hybrid Semiconductor Nanowire-Metallic Yagi-Uda Antennas

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Novel illumination strategy for lidar enabled by update in the laser product standards

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon