Publications by Federico Matteini

Related publications (35)

Growth of GaAs nanowires on Si (111) for photovoltaic applications

The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...

EPFL2016

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Dataset for "Tuning adatom mobility and nanoscale segregation by twin formation and polytypism"

Anna Fontcuberta i Morral, Federico Matteini, Luca Francaviglia

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

Zenodo2018

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Direct growth of nanotubes and graphene nanoflowers on electrochemical platinum electrodes

Giovanni De Micheli, László Forró, Sandro Carrara, Arnaud Magrez, Irene Taurino, Federico Matteini

Multi-walled carbon nanotubes and graphene nanoflowers were grown by a catalytic chemical vapor deposition process on metal surfaces. Electrodeposition was used as a versatile technique to obtain three different iron catalyst coatings on platinum microelec ...

2013

Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Eleonora Russo, Federico Matteini, Martin Heiss, Alberto Casadei

We successfully demonstrate the plasmonic coupling between metal nanoantennas and individual GaAs nanowires (NWs). In particular, by using dark-field scattering and second harmonic excitation spectroscopy in partnership with analytical and full-vector FDTD ...

American Chemical Society2014

III-V nanowire arrays: growth and light interaction

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin Heiss, Federico Matteini, Eleonora Russo, Sonia Conesa Boj, Esther Alarcon Llado, Anna Dalmau Mallorquí

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays o ...

Institute of Physics2014

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Federico Matteini, Sonia Conesa Boj, Francesca Amaduzzi, Alberto Casadei, Fauzia Jabeen

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Terahertz spectroscopy of modulation doped core-shell GaAs/AlGaAs nanowires

Anna Fontcuberta i Morral, Federico Matteini, Sonia Conesa Boj, Francesca Amaduzzi, Alberto Casadei, Daniel Rüffer

In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires ca ...

IEEE2015

Hybrid Semiconductor Nanowire-Metallic Yagi-Uda Antennas

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Alberto Casadei

We demonstrate the directional emission of individual GaAs nanowires by coupling this emission to Yagi-Uda optical antennas. In particular, we have replaced the resonant metallic feed element of the nanoantenna by an individual nanowire and measured with t ...

American Chemical Society2015

Tuning the response of non-allowed Raman modes in GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Esther Alarcon Llado, Emanuele Uccelli, Francesca Amaduzzi

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

Iop Publishing Ltd2016

Tuning adatom mobility and nanoscale segregation by twin formation and polytypism

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Luca Francaviglia

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

2018

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Gözde Tütüncüoglu, Heidi Andrea Potts, Federico Matteini, Fauzia Jabeen

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Heidi Andrea Potts, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Dmitry Mikulik, William Craig Carter

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Heidi Andrea Potts, Federico Matteini, Tao Xu

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

American Chemical Society2015

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Esther Alarcon Llado

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically s ...

Amer Chemical Soc2017

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Eleonora Russo, Heidi Andrea Potts, Federico Matteini, Sonia Conesa Boj, Jelena Vukajlovic Plestina, Anna Dalmau Mallorquí

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Esther Alarcon Llado

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Elsevier2014

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Esther Alarcon Llado, Jelena Vukajlovic Plestina, Dmitry Mikulik, Maria Ricci

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

Elsevier Science Bv2017

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Heidi Andrea Potts, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016