Publications by Lucas Güniat | EPFL Graph Search

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The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

Powder additive pulsed Nd:YAG laser (wavelength 1064 nm), with the aim of preparing AM of such material. The influence of oxygen content in the initial silicon powders on the continuous tracks morphology was investigated. It was found that the initial oxyg ...

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

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Lucas Güniat

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Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Remote Doping of Scalable Nanowire Branches

Nanopillars Enabling III-V Integration on Si (100) and (111)

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Impact of oxygen content in powders on the morphology of the laser molten tracks in preparation for additive manufacturing of silicon

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires