Publications by Pankaj Sharma | EPFL Graph Search

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The RF performance of a nanoelectromechanical systems (NEMS) capacitive switch based on graphene is evaluated. Our results show that graphene can be a good candidate for the membrane of RF NEMS switches in applications where low actuation voltage and fast ...

During the past decade, graphene --- a monolayer of carbon atoms --- has attracted enormous interest for its use in nanoelectronic device applications. The absence of bandgap, however, has stalled its use both in logic (inability to turn off) and radio fre ...

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

The experimental characterization of the surface impedance of monolayer graphene at micro and millimeter wave frequencies is addressed. Monolayer graphene is transferred on a substrate stack, which is placed in the cross-section of a rectangular waveguide. ...

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications an ...

The fabrication of a Nanoelectromechanical System (NEMS) capacitive switch consisting of a suspended multilayer graphene membrane, doubly clamped on a coplanar waveguide (CPW) is presented and its RF performance is evaluated. The scattering parameters are ...

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...

Pankaj Sharma

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Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

Graphene for Nanoelectronic Applications

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Non-contact characterization of graphene surface impedance at micro and millimeter waves

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors