Wolfgang Amadeus Vitale

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The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting ...

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive switches. We prese ...

We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based ...

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for micr ...

We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study o ...

Vanadium dioxide thin films were deposited on amorphous SiO2-coated Si substrates, by reactive magnetron sputtering at 490 °C of a pure vanadium target. The deposition parameters were optimized in order to maximize the resistivity modulation due to the met ...

The development of interconnections suitable for radio- frequency (RF) and millimeter-wave (mm-wave) applications is of foremost importance for the feasibility of high-quality substrate-integrated devices. For this purpose, we introduce and validate the te ...

The fabrication of a Nanoelectromechanical System (NEMS) capacitive switch consisting of a suspended multilayer graphene membrane, doubly clamped on a coplanar waveguide (CPW) is presented and its RF performance is evaluated. The scattering parameters are ...

We report, for the first time, self-assembled cantilever and clamped-clamped tri-state carbon nanotube (T-CNT) nano-electro-mechanical (NEM) switches with sub-100 nm air-gap dual lateral gates. Unlike conventional bi-state CNT switches, the T-CNT NEM switc ...

Wolfgang Amadeus Vitale

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Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide

RF MEMS power sensors for ultra-low power wake-up circuit applications

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits

Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors

Spatial Variability in Large Area Single and Few-layer CVD Graphene

Growth optimization of vanadium dioxide films on SiO2/Si substrates

CMOS-compatible abrupt switches based on VO2 metal-insulator transition

High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)

Performance evaluation of novel technologies for terahertz reflectarrays

Graphene RF NEMS shunt switches for analog and digital phase shifters