Etienne François Olivier Giraud

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Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their potential applications in intersubband (ISB) devices. If these materials are nowadays famous, particularly for having revolutionized domestic lighting thanks ...

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

We report the coupling and interaction between shallow donors and microcavities in bulk GaN at THz frequencies. At 4K, the shallow donors lead to an absorption at 23.5 meV (5.7 THz) under optical pumping above the bandgap of GaN. The microcavities are base ...

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Etienne François Olivier Giraud

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Optical and transport properties of GaN/(Al,Ga)N heterostructures in prospect of infrared unipolar devices

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Interaction between meta-materials and shallow donors in bulk GaN at THz frequency

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts