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Publication

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani, Daniel Marti, Etienne François Olivier Giraud
2014
Journal Articles

Abstract

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Official source

https://infoscience.epfl.ch/entities/publication/c51b02eb-e171-476e-a847-041c3e1d6a47

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Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani, Daniel Marti, Etienne François Olivier Giraud
2014
Journal Articles

Abstract

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Official source

https://infoscience.epfl.ch/entities/publication/c51b02eb-e171-476e-a847-041c3e1d6a47

About this result

Related concepts (10)

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Gallium nitride

Gallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.

Electronic component

An electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. Electronic components have a number of electrical terminals or leads.

Related publications (35)

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

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Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices