Publication

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Nicolas Grandjean, Jean-François Carlin, Lorenzo Lugani, Marco Malinverni, Etienne François Olivier Giraud
2014
Journal Articles

Abstract

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Official source

https://infoscience.epfl.ch/entities/publication/c51b02eb-e171-476e-a847-041c3e1d6a47

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n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

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