Publications by Anna Fontcuberta i Morral

Related publications (286)

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Mihai Adrian Ionescu, Anna Fontcuberta i Morral, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Carlotta Gastaldi, Valerio Piazza, Mirjana Dimitrievska, Vanessa Conti

Scalable and sustainable photovoltaic technologies require low-cost and earth-abundant semiconducting materials. Zinc phosphide is purported to be an absorber material with optimal photovoltaic properties. Herein we report the electrical properties of Zn3P ...

2023

Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul

Zinc phosphide (Zn3P2) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality ma ...

ROYAL SOC CHEMISTRY2021

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Wonjong Kim, Akshay Balgarkashi, Didem Dede, Valerio Piazza, Mirjana Dimitrievska

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Earth-abundant and low-cost semiconductors, such as zinc phosphide (Zn3P2), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and cont ...

2020

Dataset for "Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires"

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Earth-abundant and low-cost semiconductors, such as zinc phosphide (Zn3P2), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and cont ...

Zenodo2020

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

Kirsten Emilie Moselund, Anna Fontcuberta i Morral, Heike Riel, Luca Francaviglia, Nicolas Bologna

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to ...

2018

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Dirk Grundler, Ping Che, Simon Robert Escobar Steinvall, Andrea Mucchietto, Rajrupa Paul, Mohammad Hamdi

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

Carrier generation and collection in Zn3P2/InP heterojunction solar cells

Anna Fontcuberta i Morral, Franz-Josef Haug, Mahdi Zamani, Simon Robert Escobar Steinvall, Julien Hurni, Rajrupa Paul, Valerio Piazza, Mirjana Dimitrievska, Vanessa Conti, Anja Tiede, Joel René Sapera

Zinc phosphide (Zn3P2) has been lauded as a promising solar absorber material due to its functional properties and the abundance of zinc and phosphorous. In the last 4 decades, there has not been any significant improvement in the efficiencies of Zn3P2-bas ...

ELSEVIER2023

Large-Area Epitaxial Monolayer MoS2

Andras Kis, Aleksandra Radenovic, Anna Fontcuberta i Morral, Philippe Gillet, Nicola Marzari, Simone Bertolazzi, Oriol López Sánchez, Daria Krasnozhon, Ming-Wei Chen, Dmitry Ovchinnikov, Marco Gibertini, Dumitru Dumcenco, Yen-Cheng Kung, Kolyo Marinov

Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over ...

Amer Chemical Soc2015

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Maria Chiara Spadaro, Simon Robert Escobar Steinvall, Santhanu Panikar Ramanandan, Rajrupa Paul, Diego Armando Sandoval Salaiza, Mirjana Dimitrievska, Mischa Samuel Flór

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

2022

Towards Quantitative Terahertz Characterisation of Zinc Phosphide Thin Films for Photovoltaic Applications

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Léa Buswell, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

The earth-abundant and non-toxic material Zinc phosphide (Zn3P2) is a promising candidate for solar cell applications. However, growth of defect-free, high-quality thin films on substrates that can integrate with current technology (e.g. silicon) remains c ...

IEEE Computer Society2024

Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Sonia Conesa Boj

We investigate the emission properties of excitons in GaAs nanowires containing quantum disks formed by structural alternation between the zinc-blende and wurtzite phases, by means of temperature-dependent photoluminescence. At 10 K the emission from an en ...

American Physical Society (APS)2013

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Sonia Conesa Boj, Alberto Casadei, Federico Matteini, Fauzia Jabeen, Francesca Amaduzzi

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Remote Doping of Scalable Nanowire Branches

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Wonjong Kim, Didem Dede

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

2020

Generation of Human iPSC-Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

Anna Fontcuberta i Morral, Wonjong Kim

Nanowire (NW) arrays interfaced with biological cells have been demonstrated to be potent tools for advanced applications such as sensing, stimulation, or drug delivery. Many implementations, however, have so far only been studied with rather robust basic ...

WILEY2022

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known ...

ROYAL SOC CHEMISTRY2023

Image shift correction, noise analysis, and model fitting of (cathodo-)luminescence hyperspectral maps

Anna Fontcuberta i Morral, Nicolas Tappy

Hyperspectral imaging is an important asset of modern spectroscopy. It allows us to perform optical metrology at a high spatial resolution, for example in cathodoluminescence in scanning electron microscopy. However, hyperspectral datasets present added ch ...

2022

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicholas Paul Morgan, Lea Ghisalberti, Wonjong Kim, Akshay Balgarkashi, Didem Dede

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

2022

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi, Martin George Friedl, Heidi Andrea Potts

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Supercooling of nanoscale Ga drops with controlled impurity levels

Anna Fontcuberta i Morral, Emanuele Uccelli

We use in situ observations by variable temperature transmission electron microscopy on Ga drops at the tips of GaAs nanowires to investigate the phase behavior of nanoscale Ga. Experiments on pure Ga drops are compared with drops containing well-defined l ...

2011