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Luca De Michielis

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Related publications (26)

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Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher driv ...

IEEE2011

The high-mobility bended n-channel silicon nanowire transistor

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Livio Lattanzio

We report a novel device which exploits the internally combined quantum mechanical Band-To-Band and Barrier Tunneling mechanisms to achieve improved performances and overcome the intrinsic low current drive limitations of conventional Tunnel FETs and the 6 ...

IEEE2010

Compact Modeling of Homojunction Tunnel FETs

Mihai Adrian Ionescu, Antonios Bazigos, Luca De Michielis, Wladyslaw Grabinski, Arnab Biswas, Cem Alper, Nilay Dagtekin

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supp ...

IEEE2014

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Luca De Michielis, Mohammad Najmzadeh

In this work we present for the first time correlation of lateral uniaxial tensile strain and I–V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to explo ...

Elsevier2010

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Luca De Michielis, Ji Cao, Giovanni Antonio Salvatore, Nilay Dagtekin, Alexandru Rusu, Sebastian Thimotee Bartsch

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Livio Lattanzio

We report a simulation-based study of an all-silicon novel device which exploits internally combined quantum mechanical band-to-band and barrier tunneling mechanisms to overcome the intrinsic low current drive limitations of conventional silicon Tunnel FET ...

2010

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Livio Lattanzio

This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (I-ON) of conventional tunne ...

AIP American Institute of Physics2011

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Cem Alper

Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply vo ...

2012

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current. We explain the superlinear onset of the output characteristics ...

Institute of Electrical and Electronics Engineers2012

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Livio Lattanzio, Nilay Dagtekin, Heike Riel

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

American Institute of Physics2013

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...

IEEE2011

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Nilay Dagtekin

Tunnel FETs (TFETs) are being intensively investigated for their potential in achieving subthermal switching slopes and extremely low leakage currents. Recently, a promising concept has been proposed: the electron-hole bilayer TFET (EHBTFET), which exploit ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Corner Effect and Local Volume Inversion in SiNW FETs

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis

In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...

Institute of Electrical and Electronics Engineers2011

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this paper we present a novel device, the Germanium Electron-Hole Bilayer Tunnel FET (Ge EHBTFET), which exploits carrier tunneling through a bias-induced electron-hole bilayer. The proposed architecture provides a quasi-ideal alignment between the tunn ...

Institute of Electrical and Electronics Engineers2012

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Mihai Adrian Ionescu, Luca De Michielis, Cem Alper, Livio Lattanzio, Nilay Dagtekin

IEEE2012

Semiconductor tunneling device

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Cem Alper, Nilay Dagtekin

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length exten ...

2016