Publication
Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.
In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson’s equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the current levels are estimated by implementing the non-local band-to-band tunneling model from Synopsys Sentaurus TCAD. A good agreement with simulations for varying device parameters is demonstrated and the advantages and limitations of the new modeling approach are investigated and discussed.