Eric Feltin

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Related publications (85)

Page 5 of 5

Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Gabriel Christmann, Julien Dorsaz

The growth of highly-reflective nitride-based distributed Bragg reflectors (DBRs) and their use in vertical cavity structures is reviewed. We discuss the various nitride material systems employed to design Bragg mirrors and microcavities, namely the Al-x(G ...

2005

Broadband blue superluminescent light-emitting diodes based on GaN

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Sylvain Nicolay, Gabriel Christmann, Julien Dorsaz

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...

2005

Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Julien Dorsaz

We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3lambda/2 GaN ...

2005

Built-in electric field and large Stokes shift in near-lattice-matched GaN/AlInN quantum wells

Nicolas Grandjean, Eric Feltin

Near-lattice-matched GaN/AlInN quantum wells are investigated by means of contactless electroreflectance (CER) and temperature-dependent photoluminescence (PL). Large Stokes shifts, up to 400 meV, between PL peak energies and CER resonances are identified. ...

2008