Publications by Yogesh Singh Chauhan

Related publications (20)

Compact modeling of high voltage MOSFETs

In the automotive industry, there is a strong trend that has increased the electronics in cars for various functions like fuel injection, electric control of doors and windows, electric chair adjustment, air conditioning etc. The 12V battery used in the pr ...

EPFL2007

Overexpression of human alpha-Synuclein leads to dysregulated microbiome/metabolites with ageing in a rat model of Parkinson disease

Joan Romani Aumedes, Hilal Lashuel, Yogesh Singh Chauhan, Florian Lang

Background Braak's hypothesis states that sporadic Parkinson's disease (PD) follows a specific progression of pathology from the peripheral to the central nervous system, and this progression can be monitored by detecting the accumulation of alpha-Synuclei ...

BMC2023

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Mihai Adrian Ionescu, Yogesh Singh Chauhan

This paper proposes, the investigation of the Suspended Gate Field-Effect Transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYSTM Multiphysics and ISE-DESSISTM in a self-consistent system. The proposed numer ...

2008

Oscillator Based on Suspended Gate MOS Transistors

Mihai Adrian Ionescu, Yogesh Singh Chauhan, Marco Mazza, Alexandru Rusu

The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...

2008

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Christian Enz, Yogesh Singh Chauhan, Maria-Anna Chalkiadaki

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during ...

Institute of Electrical and Electronics Engineers2014

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Mihai Adrian Ionescu, Yogesh Singh Chauhan

An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage, and t ...

2008

Compact Modeling of Suspended Gate FET

Mihai Adrian Ionescu, Michel Declercq, Yogesh Singh Chauhan, Nicolas Abelé

For the first time, a compact model for suspended gate (SG) FET valid for entire bias range is proposed. The model is capable of simulating both pull-in and pull-out effects, which are the two important phenomena of this device. A novel hybrid numerical si ...

2008

Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at root s=13 TeV

Olivier Martin, Ian Smith, Matthias Finger, Richard Pitts, Miguel Fernández Ruiz, Sun Hee Kim, Jean-François Carlin, Jian Zhao, Arvind Shah, Chao Wang, Melody Swartz, Yi Zhang, Dalziel Joseph Wilson, Hoài-Minh Nguyên, Pedro Camilo de Oliveira e Silva, Alberto Hernando de Castro, João Miguel das Neves Duarte, Rakesh Chawla, Myun Sik Kim, Tian Cheng, Thomas Mountford, Yixing Chen, Ananda Sankar Roy, Varun Sharma, Bertrand François, Josef Andreas Schuler, Aravind Kumar Chandiran, Yogesh Singh Chauhan, Jae-Woo Choi, Jin Won Seo, Joo Yeon Kim, Wei Sun, Xiaoqiang Wang, Kyumin Lee, Muhammad Aiman Bin Rahmanudin Hamdan, Chia-Chun Chen, Randoald Müller, Alexis Kalogeropoulos, Jung Eung Park, Ana Margarida Da Costa Ricardo, Sebastian James Davis, Melissa Catherine Olson, Christoph Ernst René Schäfer, Adam Wade Marcus, Johannes Steen, Adrien Alexis Paul Chauvet, Hoang-Trang Lam, Maria Isabel Cordero Campana, Carlos Andres Peña Reyes, Justin Terence Notz Pekkanen, Cristopher Ariel Zeballos Avila

The production cross section of a top quark pair in association with a photon is measured in proton-proton collisions in the decay channel with two oppositely charged leptons (e(+/-)mu(-/+), e(+)e(-), or mu(+)mu(-)). The measurement is performed using 138 ...

Springer Nature2022

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Mihai Adrian Ionescu, Michel Declercq, Yogesh Singh Chauhan

A detailed analysis of capacitance behavior of high-voltage MOSFET (HV-MOS), for example, LDMOS, using device simulation is made. The impact of lateral nonuniform doping and drift region are separately analyzed. It is shown that the peaks in C-GD and C-GS ...

2008

A Highly Scalable High Voltage MOSFET Model

Mihai Adrian Ionescu, François Krummenacher, Michel Declercq, Yogesh Singh Chauhan, Costin Anghel

2006

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

Mihai Adrian Ionescu, François Krummenacher, Michel Declercq, Yogesh Singh Chauhan, Costin Anghel

2006

Partitioning Schemes in the Lateral Asymmetric MOST

Mihai Adrian Ionescu, Christian Enz, Jean-Michel Sallese, Michel Declercq, Ananda Sankar Roy, Yogesh Singh Chauhan

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

2006

Yogesh Singh Chauhan

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Compact modeling of high voltage MOSFETs

Overexpression of human alpha-Synuclein leads to dysregulated microbiome/metabolites with ageing in a rat model of Parkinson disease

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Oscillator Based on Suspended Gate MOS Transistors

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Compact Modeling of Suspended Gate FET

Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at root s=13 TeV

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

A Highly Scalable High Voltage MOSFET Model

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

Partitioning Schemes in the Lateral Asymmetric MOST

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

A Physical Analysis of High Voltage MOSFET Capacitance Behaviour

Noise Modeling in Lateral Asymmetric MOSFET

Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology

Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs

A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET

New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement

A new charge-based Compact Model for Lateral Asymmetric MOSFET