Home

Person

Nicolas Grandjean

About
Privacy
Disclaimer

Graph Chatbot

Related publications (249)

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Jean-François Carlin, Nicolas Grandjean, Marcus Gonschorek

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times- ...

2010

LED light sources (light for the future)

Nicolas Grandjean

2010

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

One-hundred-nanometer-gate (Al, In) N/GaN highelectron- mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at V-GS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequ ...

Institute of Electrical and Electronics Engineers2010

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

Jean-François Carlin, Alexei Altoukhov, Gatien Cosendey, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

Ieee2009

InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases

Jean-François Carlin, Nicolas Grandjean

Al2O3 thin films were deposited by a metal organic chemical vapour deposition on InAIN/GaN heterostructures using Ar or NH3 as a carrier gas. Effects of NH3 and Ar carrier gases on the electrical and structural properties of Al2O3/InAIN/GaN HEMT devices we ...

2009

Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We report on the properties of III-nitride based microcavities (MCs) operating in the strong coupling regime (SCR) up to room temperature. We first discuss why this class of materials is well suited to investigate the physics of cavity polaritons, which ar ...

Wiley-Blackwell2009

Phase diagram of a polariton laser from cryogenic to room temperature

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

The signature of the strong-coupling regime is unambiguously evidenced in a GaN-based microcavity (MC) above the polariton lasing threshold P-thr at room temperature through the observation of the upper polariton branch. The MC system exhibits a renormaliz ...

2009

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with so ...

2009

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Jean-François Carlin, Alexei Altoukhov, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

2009

Mapping Polarization Fields in Al0.85In0.15N/AlN/GaN Heterostructures

Jean-François Carlin, Nicolas Grandjean, Anas Mouti

Cambridge, Cambridge University Press2009

Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek, Anas Mouti

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...

2009

Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Massimo Gurioli

We report the observation of well-resolved A and B excitonic resonances in the reflectivity spectra of a wedged GaN/AlGaN quantum well (QW) with 5% Al content in the barriers for different well thicknesses. For the thicker well cases, the energy splitting ...

2009

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Jean-François Carlin, Nicolas Grandjean

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

2009

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Jean-François Carlin, Nicolas Grandjean, Marcus Gonschorek

We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n(++) GaN. Selective etching of the cap layer results in a well-controllable ultrathin barrier enhancement-mode device with a thresh ...

Institute of Electrical and Electronics Engineers2009

Interface States and Trapping Effects in Al1O3- and ZrO2/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures

Jean-François Carlin, Nicolas Grandjean

We investigate Al2O3- and ZrO2/InAlN/GaN metal-oxide-semiconductor heterostructures (MOS-H) using capacitance-time transients in the temperature range of 25-300 degrees C. A deep-level transient spectroscopy based analysis revealed the maximum interface st ...

2009

Broadband blue superluminescent light-emitting diodes based on GaN

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Jean-François Carlin, Nicolas Grandjean, Eric Feltin

We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800 degrees C in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed ...

Institute of Electrical and Electronics Engineers2009

Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

Jean-François Carlin, Nicolas Grandjean

Electrochemistry and biochemistry have always been ideal applications for diamond due to its chemical inertness and stability, sensitivity and biocompatibility. Several diamond ChemFET concepts have been proposed to date, however further improvements are s ...

2009

Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

Jean-François Carlin, Nicolas Grandjean

Atomic layer deposition (ALD) is supplied to grow ZrO2 high-k gate dielectrics and fabricate InAlN/GaN metal oxide semiconductor (MOS) high electron mobility transistors (HEMTs). Ex situ chemical surface cleaning and optimised in situ InAlN surface pre-tre ...

2009

In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

Denis Martin, Nicolas Grandjean, Tiankai Zhu

The in-plane polarities of GaN and ZnO non-polar films deposited on r- and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in ...

2009

Page 9 of 13