Publications by Andras Kis | EPFL Graph Search

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The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devic ...

We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment a ...

Andras Kis

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MoS2 Transistors Operating at Gigahertz Frequencies

Electrical control of hybrid exciton transport in a van der Waals heterostructure

Catalytically grown carbon nanotubes of small diameter have a high Young's modulus

Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD

Valley polarization by spin injection in a light-emitting van der Waals heterojunction

Electrical Transport Properties of Single-Layer WS2

Your new travel guide to the flatlands

Nanomechanical investigation of $Mo_6S_{9-x}I_x$ nanowire bundles

Single-layer MoS2 transistors

Shear and Young's Moduli of MoS2 Nanotube Ropes

Nanoscale mechanical properties – measuring techniques and applications

Oscillation modes of microtubules

Mechanical Properties of Microtubules Explored Using the Finite Elements Method

Large-Scale Integration of Experimental and Computational Data for 2D Materials

Mechanical Properties of Carbon Nanotubes