Publications by Enrico Colla | EPFL Graph Search

Related publications (10)

Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla

The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...

2005

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Mihai Adrian Ionescu, Igor Stolichnov, Enrico Colla, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb(Zr,Ti)O-3 films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Lisa Malin

The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...

2005

Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM

Nava Setter, Paul Muralt, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Monika Iwanowska

Polarization reversal in BiFeO3 (BFO) thin films in a parallel-plate capacitor configuration has been explored using piezo-force microscopy (PFM). Through-electrode mapping of the local piezoresponse allows for direct observation of the domain growth, whic ...

2011

Ferroelectric gates with rewritable domain nanopatterns for modulation of transport properties in GaN/AlGaN heterostructures

Nava Setter, Jean-François Carlin, Igor Stolichnov, Enrico Colla, Lisa Malin

The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...

AIP2005

Polarization reversal due to charge injection in ferroelectric films

Paul Muralt, Enrico Colla, Simon Bühlmann

The origin of a recently reported peculiar phenomenon-polarization reversal against the applied electric field in ferroelectric thin films [M. Aplanalp and P. Gunter, Ferroelectrics 258, 3 (2001), T. Morita and Y. Cho, Appl. Phys. Lett. 84, 257 (2004)]-has ...

2005

Persistent conductive footprints of 109 degrees domain walls in bismuth ferrite films

Nava Setter, Igor Stolichnov, Enrico Colla, Monika Iwanowska

Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109 degrees domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive ...

Amer Inst Physics2014

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Alexander Tagantsev, Nava Setter, Igor Stolichnov, Tomas Sluka, Enrico Colla, Ludwig Feigl, Petr Yudin, Konstantin Shapovalov

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Amer Chemical Soc2015

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well

Nava Setter, Igor Stolichnov, Enrico Colla

2006

Ferroelectric domains and piezoelectricity in monocrystalline Pb(Zr,Ti)O-3 nanowires

Jian Wang, Yi Wang, Nava Setter, Silviu Cosmin Sandu, Enrico Colla, Harry Joseph Trodahl, Roman Gysel

2007