Publications by Christian Enz | EPFL Graph Search

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This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity L ...

In this paper, we propose an accurate method to extract the free carrier mobility in FETs. This derivation relies only on the drift-diffusion transport model without the need to predefine the gate-voltage-mobility dependence. This approach has been assesse ...

This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of tempe ...

We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during ...

Christian Enz

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Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

A Low-Power 2.4 GHz CMOS Receiver Front-End Using BAW Resonators

Carrier Mobility Extraction in FETs

On The Compact Modelling of Induced Gate Noise in the MOS Transistor

Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design

Session 21 overview - RF trends: above-IC integration and mm-wave

A Basic Property of MOS Transistors and its Circuit Implications

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Validity of the Flat Band Perturbation Technique in Non-ohmic Region

Efficient through-waveguide wireless power transfer for body area networks

Analysis of power consumption in LC oscillators based on the inversion coefficient

Linear analysis of phase noise in LC oscillators in deep submicron CMOS technologies

A 2.6 μW Monolithic CMOS Photoplethysmographic (PPG) Sensor Operating With 2 μW LED Power for Continuous Health Monitoring

A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology

EKV Model of the MOS Transistor

Compact Modeling of Noise in Nonuniform Channel MOSFET

A 1V 450$\mu$W Quadrature Bandpass $\Delta\Sigma$ Modulator for the IEEE 802.15.4 Standard

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Advanced Compact Models for MOSFETs