Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...
The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high-frequency advanced compact models in MOSFET analysis. However, it remains an open question if this scheme can be used for field-dependent mobility that is enhanced i ...
Institute of Electrical and Electronics Engineers2006
We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...