Jean-François Carlin

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The authors report room temperature polariton lasing at lambda similar to 345 nm in a hybrid AlInN/AlGaN multiple quantum well microcavity (MQW-MC) containing a GaN/AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of cohe ...

A thin InAs layer grown in a quasi-two-dimensional film over InP reorganizes into islands if left to anneal under arsine. This surface transformation is inhibited at lower arsine fluxes. With increasing temperature, the surface transformation is activated as long as the effective arsine coverage is sufficient.

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...

The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak refl ...

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation duri ...

The authors investigate 2 mu m gate-length InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12 nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a ga ...

The intermixing process of ultrathin InAs/InP strained quantum well structures by thermal annealing at 730-830-degrees-C is investigated by photoluminescence measurements. Analyzing the results using a microscopic model, the interdiffusion process is characterized by an activation energy close to 3.8+/-2.0 eV, leading to an interdiffusion coefficient close to 7+/-0.5x10(-7) cm2/s at 830-degrees-C.

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating de ...

We report on III-nitride waveguides with c-plane GaN/(Al,Ga)N quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal-mode splitting as large as 60 meV at low temperatures thanks to the large overla ...

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) with varied gate length was evaluated. The current gain cutoff frequency f(T) and the maximum os ...

Jean-François Carlin

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Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity

Dynamics of island formation in the growth of InAs/InP quantum wells

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

As/P interdiffusion in ultrathin InAs/InP strained quantum wells

Mg doping for p-type AlInN lattice-matched to GaN

Propagating Polaritons in III-Nitride Slab Waveguides

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode

Biexcitonic molecules survive excitons at the Mott transition

RF Performance of InAlN/GaN HFETs and MOSHFETs With f(T) X L-G up to 21 GHz . mu m

POLARIZATION BEHAVIOR ABOVE THE POLARITON CONDENSATION THRESHOLD IN A GaN-BASED MULTIPLE QUANTUM WELL MICROCAVITY

Growth of GaInAs by chemical beam epitaxy

Gas source switching in chemical beam epitaxy with pressure regulated gas flux

Chemical beam epitaxy of pseudomorphic InGaAs/InP bidimensional electron gas

880nm top emitting Microcavity Light Emitting Diode and Waveguide Anti-Resonant Tapered Light Emitting Diode

Photonic crystal extractors