Lecture

Semiconductors: Band Structure and Carrier Concentration

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In course

PHYS-310: Solid state physics II

Ce cours de deux semestres donne une introduction à la Physique du solide, à la structure cristalline, aux vibrations du réseau, aux propriétés électroniques, de transport thermique et électrique ainsi qu'aux propriétés magnétiques. Il se situe au niveau d ...

Description

This lecture covers the band structure of semiconductors, insulators, and metals, explaining the concept of density of states and the relationship between band slope and number of states. It also discusses the Fermi distribution at finite temperatures and the densities of electrons and holes in intrinsic semiconductors.

Instructors (3)

Harald Brune

Originaire de Münich en Allemagne, né en 1961, Harald Brune obtient son diplôme en physique de l'Université Ludwig Maximilians en 1989. Après une thèse en chimie physique à l'Institut Fritz-Haber de la Société Max-Planck à Berlin il obtient son titre de docteur ès sciences en 1992. Dès cela, il rejoint le groupe du Prof. K. Kern à l'Institut de physique expérimentale à l'EPFL. En 1995 il est chercheur invité à Copenhague travaillant en modélisation chez le Prof. J. Nørskov. De retour à l'EPFL, il se voit décerné le prix Latsis EPFL 1996 pour ses études par microscopie à effet tunnel de processus atomiques déterminants la croissance cristalline de couches minces. En 1998 il obtient son habilitation (venia legendi) en Physique et est nommé Maître d'enseignement et de recherche (MER) en nanophysique à l'EPFL. La même année il recoit une offre de Professeur Ordinaire (C4) de l'Université Philipps de Marburg. Début 1999 il réfuse cette offre et accepte un poste de Professeur Extraordinaire à l'EPFL et s'installe au sein de l'Institut de la Physique des Nanostructures. Il est nommé Professeur Ordinaire en 2005. Sa recherche porte sur les propriétés physiques (en particulier le magnétisme et la structure électronique) de nouvelles formes de la matière condensée comme des nanostructures et des couches ultra-minces. Il s'intéresse également à la catalyse hétérogène sur des systèmes inspirés dans leur composition et taille par celle des sites actives dans les enzymes en biologie. Il enseigne la Physique Générale pour ingénieurs, la Physique des matériaux solides pour physiciens, les méthodes expérimentales pour physiciens, ainsi que la Physique des surfaces, interfaces et nanostrcutures à l'école doctorale.

Oleg Yazyev

Prof. Oleg Yazyev (Олег Язев) was born in Simferopol, Crimean peninsula. He obtained his degree in chemistry from Moscow State University in 2003. He then joined Ecole Polytechnique Fédérale de Lausanne (EPFL) completing his PhD thesis in chemistry and chemical engineering in 2007. Next two years he has spent as a postdoctoral fellow at the Institute of Theoretical Physics (ITP) and the Institute for Numerical Research in the Physics of Materials (IRRMA) of the same institution. In 2009-2011 he was a postdoctoral fellow at the Department of Physics of the University of California, Berkeley and the Lawrence Berkeley National Laboratory. In September 2011 he started an independent research group supported by the Swiss National Science Foundation professorship grant. In 2012 he was awarded an ERC Starting grant. His current research focuses on theoretical and computational physics of two-dimensional and topological materials with strong emphasis on their prospective technological applications. ResearcherID profile of Oleg Yazyev Google Scholar profile of Oleg Yazyev

Official source

Ontological neighbourhood

Physics

Condensed matter physics: Solid-state physics

Chemistry

Organic chemistry: Organometallic chemistry

Related concepts (32)

Fermi level

The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by μ or EF for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from. A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties; how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Fermi energy

The Fermi energy is a concept in quantum mechanics usually referring to the energy difference between the highest and lowest occupied single-particle states in a quantum system of non-interacting fermions at absolute zero temperature. In a Fermi gas, the lowest occupied state is taken to have zero kinetic energy, whereas in a metal, the lowest occupied state is typically taken to mean the bottom of the conduction band. The term "Fermi energy" is often used to refer to a different yet closely related concept, the Fermi level (also called electrochemical potential).

Band gap

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.

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Semiconductor Devices II: Defects Engineering

Covers the analysis of measurements and defects engineering in semiconductor devices, including density of states and defect probing.

Density of States in Semiconductor Devices

Explores density of states in semiconductor devices, covering electron gas, energy bands, Fermi-Dirac distribution, and band structures.

Carrier Statistics: Understanding Fermi Level Dynamics