Lecture

Large-area sensors: Devices and Applications

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

In course

MICRO-566: Large-area electronics: devices and materials

Introduction to the physical concepts involved in the description of optical and electronic transport properties of thin-film semiconductor materials found in many large-area applications (solar cells, displays, imagers, etc) and introduction to the physic ...

Description

This lecture covers the principles and applications of large-area sensors, focusing on flat panel imagers, X-ray imaging, medical imaging, security, and non-destructive testing. It explains the operation of position sensitive devices (PSD) and their different types, such as c-Si PSD and thin-film PSD. The lecture also delves into the interaction of particles with matter, stopping power, energy loss for charged particles, and electron-hole pair creation. Additionally, it discusses photon interaction with matter, including photon absorption length, direct and indirect detection methods for X-rays, and the energy transfer processes involved. The content is supported by detailed explanations and diagrams.

Instructors (2)

Christophe Ballif

Christophe Ballif is director of the Phototovoltaics and Thin Film Electronics Laboratoryb) (PV-Lab at the institute of microengineering (IMT) in Neuchâtel (part of the EPFL since 2009). The lab focus is on the science and technology of high efficiency heterojunction crystalline cells,so-called passivating contacts for solar cells, multi-junction solar cells include novel generation Perovskite on innovative optical high speed detector and on various macroelectronics application. It also deals with energy management with a focus on integration of solar electricity into the energy system. The PV-Lab has strongly contributed to technology transfer and industrialization of novel devices and full technology with numerous companies. Christophe Ballif graduated as a physicist from the EPFL in 1994, where he also obtained in 1998 his Phd degree working on novel PV materials. He accomplished his postdoctoral research at NREL (Golden, US) on compound semiconductor solar cells (CIGS and CdTe). He worked then at the Fraunhofer ISE (Ge) on crystalline silicon photovoltaics (monocrystalline and multi-crystalline) until 2003 and then at the EMPA in Thun (CH) before becoming full professor at the University of Neuchâtel IMT in 2004, taking over the chair of Prof. A. Shah. Since 2013, C.Ballif is also the director of the new CSEM PV-Center, also located in Neuchâtel. The CSEM PV-Center is focussing more on industrialisation and technology transfer in the field of solar energy, including solar electricity management and storage. At the core of the CSEM PV-center activities lies several "pilot lines" for various kinds of solar cells manufacturing, with a focus coating technologies, wet chemistry processes for crystalline silicon, metalisation techniques for solar cells, and a platform for developing "ideal packaging solutions and polymers" for PV modules. In addition, joined facitilites between CSEM and EPFL of over 800 m2 are available for modules manufacturing, measuring and accelerated aging. CSEM PV-center has also full team dedicated to storage and energy systems and operates a joined center with BFH in Biel for research on electrochemical storage. He (co-) authored over 500 journal and technical papers, as well as several patents. He is an elected member of the SATW, member of the scientific council of the Swiss AEE, and member of the board of the EPFL Energy center. In 2016, he recieved the Becquerel prize for his contributions to the field of high efficiency photovoltaics.

Franz-Josef Haug

I studied Physics between 1990 and 1996 at the Universities of Ulm (Germany) and Waikato (New Zealand). While specializing mostly on Theoretical Physics and Quantum Theory during my studies, I turned towards Experimental Physics for a graduate work on gas-phase epitaxy of silicon. After that, I pursued a PhD program at ETH Zürich (Switzerland), studying Cu(In,Ga)Se2 solar cells. As PostDoc, I went to EMPA (Switzerland) to work on plasma processes for hard coatings of TiN and to the Jülich Research Centre in Germany to study light scattering ZnO front contacts for solar cells. In 2005 I joined the Institute of Microengineering (IMT) at the University of Neuchatel to lead a research group on thin film silicon solar cells within the PV-Lab. In 2009 the IMT was integrated into EPFL. My main research interests are optics, charge transport in semiconductors and renewable energy in general. My current work is devoted to passivating contacts for crystalline silicon solar cells, using thin silicon films as contact layers. In 2015 I was appointed Maitre d'Enseignement et Recherche (Senior Lecturer and Scientist) and member of the Faculty of STI. From 2013 to 2015 I was member of the EFPL Teachers Council (CCE) and from 2016 and 2018 I was elected into the Council of the Engineering School (CF-STI). In 2020 I was elected to become a member of CF-STI. My main objective for the legislature is to represent the role of EPFL's intermediate staff and to raise the awareness for concerns of the satellite campuses.

Official source

Ontological neighbourhood

Health sciences

Radiology: Topics in radiology

Related concepts (32)

Image sensor

An image sensor or imager is a sensor that detects and conveys information used to form an . It does so by converting the variable attenuation of light waves (as they pass through or reflect off objects) into signals, small bursts of current that convey the information. The waves can be light or other electromagnetic radiation. Image sensors are used in electronic imaging devices of both analog and digital types, which include digital cameras, camera modules, camera phones, optical mouse devices, medical imaging equipment, night vision equipment such as thermal imaging devices, radar, sonar, and others.

X-ray image intensifier

An X-ray image intensifier (XRII) is an that converts X-rays into visible light at higher intensity than the more traditional fluorescent screens can. Such intensifiers are used in X-ray imaging systems (such as fluoroscopes) to allow low-intensity X-rays to be converted to a conveniently bright visible light output. The device contains a low absorbency/scatter input window, typically aluminum, input fluorescent screen, photocathode, electron optics, output fluorescent screen and output window.

Active-pixel sensor

An active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.

Radiography

Radiography is an imaging technique using X-rays, gamma rays, or similar ionizing radiation and non-ionizing radiation to view the internal form of an object. Applications of radiography include medical radiography ("diagnostic" and "therapeutic") and industrial radiography. Similar techniques are used in airport security (where "body scanners" generally use backscatter X-ray). To create an image in conventional radiography, a beam of X-rays is produced by an X-ray generator and is projected toward the object.

X-ray

X-ray radiation, or, much less commonly, X-radiation, is a penetrating form of high-energy electromagnetic radiation. Most X-rays have a wavelength ranging from 10 nanometers to 10 picometers, corresponding to frequencies in the range 30 petahertz to 30 exahertz (3e16Hz to 3e19Hz) and energies in the range 124 keV to 145 eV, respectively. X-ray wavelengths are shorter than those of UV rays and typically longer than those of gamma rays.

Related lectures (37)

Thin Film Technologies

Explores thin film technologies for photovoltaic devices, including CdTe, CIGS, and III-V solar cells, discussing their advantages, drawbacks, and market status.

Large-area sensors: Devices and Applications

Explores large-area sensors, covering flat panel imagers, X-ray imaging, medical imaging, and particle detection.

1d Particles motion in a static uniform magnetic field & plasma magnetic properties

Large-area sensors: X-ray Detection

Explores large-area sensors for X-ray detection, covering direct and indirect methods, detector performance metrics, and active matrix flat panel imagers.