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Lecture

Contact Area and Junction Resistance Analysis

In course

ME-412: Experimental methods in engineering mechanics

This course gives an advanced treatment of experimental methods in the context of mechanics by way of example. Students will construct significant components of experimental apparatus, use their apparatus to collect data, interpret the resulting data, and ...

Description

This lecture presents the results of physical measurements and LT-SPI simulations conducted by Maelle, Arnaud, and Mengbo. They discuss the experimental protocols, including the importance of polishing sewer bars and measuring their length to calculate resistance. The lecture also covers the formulas used to calculate contact areas and junction resistance, as well as the setup for LT-SPI simulations. The comparison between experimental measures and simulations reveals the impact of oxide removal on results, highlighting the need for accurate measurements and further experiments to improve accuracy.

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Instructor

John Martin Kolinski

Dr. Kolinski studied Applied Mathematics (Sc.M.) and Applied Physics (Ph.D.) at Harvard University, completing a PhD under the supervision of L. Mahadevan and Shmuel Rubinstein on the role of air in droplet impact. John did his post-doc at the Hebrew University of Jerusalem in Israel supported by the Fulbright post-doctoral fellowship. At HUJI, he worked on interfacial instabilities in soft matter in the labs of Eran Sharon and Jay Fineberg. John continues his research into interfacial mechanics at EPFL in EMSI, his newly founded laboratory for the study of Engineering Mechanics of Soft Interfaces.

Official source

Related concepts (4)

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.

Bipolar junction transistor

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.

Ohmic contact

An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds. By contrast, a junction or contact that does not demonstrate a linear I–V curve is called non-ohmic.

Negative resistance

In electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it. This is in contrast to an ordinary resistor in which an increase of applied voltage causes a proportional increase in current due to Ohm's law, resulting in a positive resistance. While a positive resistance consumes power from current passing through it, a negative resistance produces power.

Related concepts (4)

P–n junction

Bipolar junction transistor

Ohmic contact

Negative resistance