Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Lecture

MOS Device Capacitances

In course

EE-320: Analog IC design

Introduction to the design of analog CMOS integrated circuits at the transistor level. Understanding and design of basic structures. ...

Description

This lecture covers the MOS device capacitances in different regions, including the oxide capacitance, depletion capacitance, and overlap capacitance. It explains the impact of voltage variations on capacitances and provides examples for better understanding.

Instructor

Mahsa Shoaran

Official source

Related concepts (31)

Capacitor types

Capacitors are manufactured in many styles, forms, dimensions, and from a large variety of materials. They all contain at least two electrical conductors, called plates, separated by an insulating layer (dielectric). Capacitors are widely used as parts of electrical circuits in many common electrical devices. Capacitors, together with resistors and inductors, belong to the group of passive components in electronic equipment.

High-κ dielectric

In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.

Capacitance

Capacitance is the capability of a material object or device to store electric charge. It is measured by the charge in response to a difference in electric potential, expressed as the ratio of those quantities. Commonly recognized are two closely related notions of capacitance: self capacitance and mutual capacitance. An object that can be electrically charged exhibits self capacitance, for which the electric potential is measured between the object and ground.

CMOS

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Related lectures (35)

MOS Parasitics

Covers the MOS I/V characteristics, including triode and saturation regions, deep triode, and second-order effects.

Analog CMOS Integrated Circuits: Fundamentals

Covers the fundamentals of analog CMOS integrated circuits, emphasizing transistor-level design principles and the historical impact of CMOS technology.

Semiconductor Devices II: Defects Engineering

Covers the analysis of measurements and defects engineering in semiconductor devices, including density of states and defect probing.

Dielectrics and Capacitors

Explores Gauss's law with dielectrics, ideal capacitors, and screening of charges.

Second order effects: Body Effect and Channel-Length Modulation