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Lecture

MOS Parasitics

In course

EE-320: Analog IC design

Introduction to the design of analog CMOS integrated circuits at the transistor level. Understanding and design of basic structures. ...

Description

This lecture covers the MOS I/V characteristics, including triode and saturation regions, deep triode, and second-order effects such as body effect and channel-length modulation. It also discusses MOS device capacitances in different regions and provides examples for calculating junction capacitances.

Instructor

Mahsa Shoaran

Official source

Ontological neighbourhood

Physics

Condensed matter physics: Solid-state physics

Related concepts (32)

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

JFET

The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between source and drain terminals.

Parasitic capacitance

Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. When two electrical conductors at different voltages are close together, the electric field between them causes electric charge to be stored on them; this effect is capacitance. All practical circuit elements such as inductors, diodes, and transistors have internal capacitance, which can cause their behavior to depart from that of ideal circuit elements.

Related lectures (59)

MOS Transistor Operation: Triode vs Saturation

Explains MOS transistor operation in triode and saturation regions, focusing on transconductance and layout.

Review of BJT and MOS

Provides a detailed review of Bipolar Junction Transistor (BJT) and Metal-Oxide-Semiconductor (MOS) devices.

Basic Electronics: PN Junction and BJT

Introduces the PN junction, BJT operation modes, and MOS transistor basics.

Second order effects: Body Effect and Channel-Length Modulation

Explores the impact of Body Effect and Channel-Length Modulation on MOSFET performance.

Semiconductor Devices II: Defects Engineering