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Lecture

Emerging Memory I

In course

CS-471: Advanced multiprocessor architecture

Multiprocessors are basic building blocks for all computer systems. This course covers the architecture and organization of modern multiprocessors, prevalent accelerators (e.g., GPU, TPU), and datacenters. It includes a research project on multiprocessors ...

Description

This lecture covers the landscape of big data, the importance of memory in online services, and the challenges faced by memory systems. It discusses the wishlist for a memory system, the key challenge of bandwidth, and the memory hierarchy. The lecture explores emerging DRAM technologies, die-stacked caches, and page-based DRAM caches. It also delves into the implications of skewed dataset accesses, footprint prediction, and the performance comparison of different DRAM caches. The lecture concludes with discussions on storage-class memory, the integration of DRAM and SCM, and the design guidelines for SCM-DRAM systems.

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Instructor

Babak Falsafi

Babak is a Professor in the School of Computer and Communication Sciences and the founding director of the EcoCloud, an industrial/academic consortium at EPFL investigating scalable data-centric technologies. He has made numerous contributions to computer system design and evaluation including a scalable multiprocessor architecture which was prototyped by Sun Microsystems (now Oracle), snoop filters and memory streaming technologies that are incorporated into IBM BlueGene/P and Q and ARM cores, and computer system performance evaluation methodologies that have been in use by AMD, HP and Google PerKit . He has shown that hardware memory consistency models are neither necessary (in the 90's) nor sufficient (a decade later) to achieve high performance in multiprocessor systems. These results eventually led to fence speculation in modern microprocessors. His latest work on workload-optimized server processors laid the foundation for the first generation of Cavium ARM server CPUs, ThunderX. He is a recipient of an NSF CAREER award, IBM Faculty Partnership Awards, and an Alfred P. Sloan Research Fellowship. He is a fellow of IEEE and ACM.

Official source

Ontological neighbourhood

Computer engineering

Computer architecture: Embedded systems

Related concepts (32)

Dynamic random-access memory

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.

Random-access memory

Random-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.

Synchronous dynamic random-access memory

Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an asynchronous interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a synchronous interface, whereby changes on control inputs are recognised after a rising edge of its clock input.

Memory cell (computing)

The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory.

Three-dimensional integrated circuit

A three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.

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Cache Memory

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Memories: Evolution and Types

Explores the evolution and taxonomy of memories, focusing on SRAM and DRAM differences, memory layout, and functional taxonomy.

Memory Cache Principles

Explores memory cache principles, emphasizing spatial locality, latency impact, and cache efficiency strategies.

Untitled

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