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Lecture

Radiation Detection: Combining and Comparing Systems

In course

PHYS-452: Radiation detection

The course presents the detection of ionizing radiation in the keV and MeV energy ranges. Physical processes of radiation/matter interaction are introduced. All steps of detection are covered, as well as detectors, instrumentations and measurements methods ...

Description

This lecture covers the principles of radiation detection, focusing on semiconductor materials and their use in detectors. Topics include intrinsic and doped semiconductors, light collection methods, photomultiplier tubes, photodiodes, and silicon photomultipliers. The lecture also discusses signal production, measurement chains, counting statistics, uncertainties, energy resolution, and the Fano factor.

Instructor

Vincent Pierre Lamirand

After a PhD on the measurement of (p,n) reactions cross sections on small accelerators (IRSN, France), I have worked on the development of neutron detectors and measurement methods for reactor physics (CEA, France). I am part of the LRS staff since October 2014.

Official source

Related concepts (32)

Photodiode

A photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.

Photomultiplier tube

Photomultiplier tubes (photomultipliers or PMTs for short) are extremely sensitive detectors of light in the ultraviolet, visible, and near-infrared ranges of the electromagnetic spectrum. They are members of the class of vacuum tubes, more specifically vacuum phototubes. These detectors multiply the current produced by incident light by as much as 100 million times or 108 (i.e., 160 dB), in multiple dynode stages, enabling (for example) individual photons to be detected when the incident flux of light is low.

Avalanche photodiode

An avalanche photodiode (APD) is a highly sensitive semiconductor photodiode detector that exploits the photoelectric effect to convert light into electricity. From a functional standpoint, they can be regarded as the semiconductor analog of photomultiplier tubes. The avalanche photodiode (APD) was invented by Japanese engineer Jun-ichi Nishizawa in 1952. However, study of avalanche breakdown, microplasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

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