Lecture

Lithography: Photoresist Sensitivity and Modulation Transfer Function

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In course

MICRO-621: MOOC: Micro and Nanofabrication (MEMS)

Micro- and nanofabrication can be taught to students and professionals by textbooks and ex-cathedra lectures, but the real learning comes from seeing the manufacturing steps as they happen. This MOOC will not only explain the basics of microfabrication but ...

Description

This lecture covers the importance of photoresist properties in lithography resolution, focusing on intrinsic sensitivity and resist contrast. It also explains the optical transfer function and its role in defining the condition for the optical image.

In MOOC

Micro and Nanofabrication (MEMS)

Microfabrication and nanofabrication are the basis of manufacturing for nearly all modern miniaturized systems that are ubiquitously used in our daily life. Examples include; computer chips and integrated sensors for monitoring our environment, cars, mobile phones, medical devices and more. Micro- and nanofabrication can be taught to students and professionals by textbooks and ex-cathedra lectures, but the real learning comes from seeing the manufacturing steps as they happen. In this engineering course,

Instructors (2)

Martinus Adela Maria Gijs

Martin A.M. Gijs received his degree in physics in 1981 from the Katholieke Universiteit Leuven, Belgium and his Ph.D. degree in physics at the same university in 1986. He joined the Philips Research Laboratories in Eindhoven, The Netherlands, in 1987. Subsequently, he has worked there on micro-and nano-fabrication processes of high critical temperature superconducting Josephson and tunnel junctions, the microfabrication of microstructures in magnetic multilayers showing the giant magnetoresistance effect, the design and realisation of miniaturised motors for hard disk applications and the design and realisation of planar transformers for miniaturised power applications. He joined EPFL in 1997. His present interests are in developing technologies for novel magnetic devices, new microfabrication technologies for microsystems fabrication in general and the development and use of microsystems technologies for microfluidic and biomedical applications in particular.

Jürgen Brugger

I am a Professor of Microengineering and co-affiliated to Materials Science. Before joining EPFL I was at the MESA Research Institute of Nanotechnology at the University of Twente in the Netherlands, at the IBM Zurich Research Laboratory, and at the Hitachi Central Research Laboratory, in Tokyo, Japan. I received a Master in Physical-Electronics and a PhD degree from Neuchâtel University, Switzerland. Research in my laboratory focuses on various aspects of MEMS and Nanotechnology. My group contributes to the field at the fundamental level as well as in technological development, as demonstrated by the start-ups that spun off from the lab. In our research, key competences are in micro/nanofabrication, additive micro-manufacturing, new materials for MEMS, increasingly for wearable and biomedical applications. Together with my students and colleagues we published over 200 peer-refereed papers and I had the pleasure to supervise over 25 PhD students. Former students and postdocs have been successful in receiving awards and starting their own scientific careers. I am honoured for the appointment in 2016 as Fellow of the IEEE “For contributions to micro and nano manufacturing technology”. In 2017 my lab was awarded an ERC AdvG in the field of advanced micro-manufacturing.

Official source

Related concepts (6)

Photolithography

In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.

Photoresist

A photoresist (also known simply as a resist) is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronics industry. The process begins by coating a substrate with a light-sensitive organic material. A patterned mask is then applied to the surface to block light, so that only unmasked regions of the material will be exposed to light. A solvent, called a developer, is then applied to the surface.

Interference lithography

Interference lithography (or holographic lithography) is a technique for patterning regular arrays of fine features, without the use of complex optical systems or photomasks. The basic principle is the same as in interferometry or holography. An interference pattern between two or more coherent light waves is set up and recorded in a recording layer (photoresist). This interference pattern consists of a periodic series of fringes representing intensity minima and maxima.

Electron-beam lithography

Electron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.

Extreme ultraviolet lithography

Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.

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