Lecture

Focused Beam Lithography: E-Beam Basics

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In course

MICRO-530: Nanotechnology

This course gives the basics for understanding nanotechnology from an engineer's perspective: physical background, materials aspects and scaling laws, fabrication and imaging of nanoscale devices. ...

Description

This lecture covers the principles of UV and DUV lithography, optical proximity correction, phase change masks, and immersion lithography. It then delves into electron beam lithography (EBL), discussing its basic concepts, pattern generation, resist materials, and electron optics. The lecture also explores electron guns, lens aberrations, and optics, highlighting the importance of field emitters, lens types, and aberration correction. Additionally, it explains the implementation of EBL, including the equipment setup, resist processing, and resolution capabilities. The lecture concludes with a comparison of EBL with other lithography methods and an overview of emerging nanofabrication techniques.

Instructors (2)

Giovanni Boero

Expertise Nuclear magnetic resonance (NMR), Electron spin resonance (ESR), Ferromagnetic resonance (FMR), RF/MW discrete and integrated electronics, Magnetic sensors, Noise phenomena. Mission Methods based on the magnetic resonance of nuclear spins (nuclear magnetic resonance (NMR)), unpaired electrons spins (electron spin resonance (ESR)), and coupled electron spins electrons (ferromagnetic resonance (FMR)) are very powerful radiofrequency/microwave spectroscopy tools used in many research and industrial a

Jürgen Brugger

I am a Professor of Microengineering and co-affiliated to Materials Science. Before joining EPFL I was at the MESA Research Institute of Nanotechnology at the University of Twente in the Netherlands, at the IBM Zurich Research Laboratory, and at the Hitachi Central Research Laboratory, in Tokyo, Japan. I received a Master in Physical-Electronics and a PhD degree from Neuchâtel University, Switzerland. Research in my laboratory focuses on various aspects of MEMS and Nanotechnology. My group contributes to the field at the fundamental level as well as in technological development, as demonstrated by the start-ups that spun off from the lab. In our research, key competences are in micro/nanofabrication, additive micro-manufacturing, new materials for MEMS, increasingly for wearable and biomedical applications. Together with my students and colleagues we published over 200 peer-refereed papers and I had the pleasure to supervise over 25 PhD students. Former students and postdocs have been successful in receiving awards and starting their own scientific careers. I am honoured for the appointment in 2016 as Fellow of the IEEE “For contributions to micro and nano manufacturing technology”. In 2017 my lab was awarded an ERC AdvG in the field of advanced micro-manufacturing.

Official source

Related concepts (32)

Extreme ultraviolet lithography

Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.

Photolithography

In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.

Electron-beam lithography

Electron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.

Atomic force microscopy

Atomic force microscopy (AFM) or scanning force microscopy (SFM) is a very-high-resolution type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit. Atomic force microscopy (AFM) is a type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit.

Nanoimprint lithography

Nanoimprint lithography (NIL) is a method of fabricating nanometer scale patterns. It is a simple nanolithography process with low cost, high throughput and high resolution. It creates patterns by mechanical deformation of imprint resist and subsequent processes. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting. Adhesion between the resist and the template is controlled to allow proper release.

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