Wide-bandgap semiconductorWide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.
Raman scatteringRaman scattering or the Raman effect (ˈrɑːmən) is the inelastic scattering of photons by matter, meaning that there is both an exchange of energy and a change in the light's direction. Typically this effect involves vibrational energy being gained by a molecule as incident photons from a visible laser are shifted to lower energy. This is called normal Stokes Raman scattering. The effect is exploited by chemists and physicists to gain information about materials for a variety of purposes by performing various forms of Raman spectroscopy.
Charge carrierIn physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current.
Band gapIn solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.
Maxwell relationsMaxwell's relations are a set of equations in thermodynamics which are derivable from the symmetry of second derivatives and from the definitions of the thermodynamic potentials. These relations are named for the nineteenth-century physicist James Clerk Maxwell. symmetry of second derivatives The structure of Maxwell relations is a statement of equality among the second derivatives for continuous functions. It follows directly from the fact that the order of differentiation of an analytic function of two variables is irrelevant (Schwarz theorem).
Magnetic semiconductorMagnetic semiconductors are semiconductor materials that exhibit both ferromagnetism (or a similar response) and useful semiconductor properties. If implemented in devices, these materials could provide a new type of control of conduction. Whereas traditional electronics are based on control of charge carriers (n- or p-type), practical magnetic semiconductors would also allow control of quantum spin state (up or down).
BiasingIn electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an active device in an amplifier. Many electronic devices, such as diodes, transistors and vacuum tubes, whose function is processing time-varying (AC) signals, also require a steady (DC) current or voltage at their terminals to operate correctly. This current or voltage is called bias. The AC signal applied to them is superposed on this DC bias current or voltage.
Covariant formulation of classical electromagnetismThe covariant formulation of classical electromagnetism refers to ways of writing the laws of classical electromagnetism (in particular, Maxwell's equations and the Lorentz force) in a form that is manifestly invariant under Lorentz transformations, in the formalism of special relativity using rectilinear inertial coordinate systems. These expressions both make it simple to prove that the laws of classical electromagnetism take the same form in any inertial coordinate system, and also provide a way to translate the fields and forces from one frame to another.
Electric currentAn electric current is a flow of charged particles, such as electrons or ions, moving through an electrical conductor or space. It is defined as the net rate of flow of electric charge through a surface. The moving particles are called charge carriers, which may be one of several types of particles, depending on the conductor. In electric circuits the charge carriers are often electrons moving through a wire. In semiconductors they can be electrons or holes.
Potential energyIn physics, potential energy is the energy held by an object because of its position relative to other objects, stresses within itself, its electric charge, or other factors. The term potential energy was introduced by the 19th-century Scottish engineer and physicist William Rankine, although it has links to the ancient Greek philosopher Aristotle's concept of potentiality. Common types of potential energy include the gravitational potential energy of an object, the elastic potential energy of an extended spring, and the electric potential energy of an electric charge in an electric field.
Drift velocityIn physics, drift velocity is the average velocity attained by charged particles, such as electrons, in a material due to an electric field. In general, an electron in a conductor will propagate randomly at the Fermi velocity, resulting in an average velocity of zero. Applying an electric field adds to this random motion a small net flow in one direction; this is the drift. Drift velocity is proportional to current. In a resistive material, it is also proportional to the magnitude of an external electric field.
Grand potentialThe grand potential or Landau potential or Landau free energy is a quantity used in statistical mechanics, especially for irreversible processes in open systems. The grand potential is the characteristic state function for the grand canonical ensemble. Grand potential is defined by where U is the internal energy, T is the temperature of the system, S is the entropy, μ is the chemical potential, and N is the number of particles in the system.
