Wide-bandgap semiconductor

Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators. Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies, and temperatures than conventional semiconductor materials like silicon and gallium arsenide. They are the key component used to make short-wavelength (green-UV) LEDs or lasers, and are also used in certain radio frequency applications, notably military radars. Their intrinsic qualities make them suitable for a wide range of other applications, and they are one of the leading contenders for next-generation devices for general semiconductor use. The wider bandgap is particularly important for allowing devices that use them to operate at much higher temperatures, on the order of 300 °C. This makes them highly attractive for military applications, where they have seen a fair amount of use. The high temperature tolerance also means that these devices can be operated at much higher power levels under normal conditions. Additionally, most wide-bandgap materials also have a much higher critical electrical field density, on the order of ten times that of conventional semiconductors. Combined, these properties allow them to operate at much higher voltages and currents, which makes them highly valuable in military, radio, and power conversion applications. The US Department of Energy believes they will be a foundational technology in new electrical grid and alternative energy devices, as well as the robust and efficient power components used in high-power vehicles from plug-in electric vehicles to electric trains.