Lecture

Semiconductor Physics: Signal Amplification and Doping

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In course

PHYS-452: Radiation detection

The course presents the detection of ionizing radiation in the keV and MeV energy ranges. Physical processes of radiation/matter interaction are introduced. All steps of detection are covered, as well as detectors, instrumentations and measurements methods ...

Description

This lecture covers the principles of signal amplification in semiconductor devices, focusing on pn doping in silicon. The instructor explains the relationship between doping levels and signal amplification, as well as the impact on device performance. Various spectroscopic techniques are discussed to analyze the doping process and optimize device characteristics.

Instructor

Vincent Pierre Lamirand

After a PhD on the measurement of (p,n) reactions cross sections on small accelerators (IRSN, France), I have worked on the development of neutron detectors and measurement methods for reactor physics (CEA, France). I am part of the LRS staff since October 2014.

Official source

Related concepts (32)

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

JFET

The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between source and drain terminals.

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