Lecture

Photodiodes: Operation and Limitations

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In course

EE-440: Photonic systems and technology

The physics of optical communication components and their applications to communication systems will be covered. The course is intended to present the operation principles of contemporary optical communication systems employing optical fibers and modern op ...

Description

This lecture covers the operation of p-n photodiodes, explaining how the reverse current increases upon photon absorption due to the generation of electron-hole pairs. It delves into the importance of the depletion region in transporting charge carriers and discusses the i-V relation of photodiodes under different biasing conditions. Additionally, it explores the limitations of p-n photodiodes, focusing on the impact of the depletion region width on the device's performance.

Instructor

Camille Sophie Brès

Prof. Camille-Sophie Brès is an Associate Professor in the Institute of Electrical Engineering within the School of Engineering of EPFL. Her primary research interests are centered optical communications and on parametric and nonlinear processes in optical fiber and non-silica platforms for ultrafast signal processing, all optical networks, sensing and light sources. She has authored over thirty peer-reviewed journal articles and has presented more than 15 papers at international conferences. She received the Gordon Wu Fellowship for her graduate studies, the NSF CIANs Diversity Postdoctoral Fellowship in 2009, the Early Career Woman in Engineering Award in 2016. She is a senior member of the IEEE and OSA. 2019 - present: Associate Professor in the Institute of Electrical Engineering, EPFL 2011 - 2018: Assistant Professor in the Institute of Electrical Engineering, EPFL 2010 - 2011: Assistant Project Scientist, University of California San Diego (UCSD) 2007 - 2010: Postdoc in ECE, University of California San Diego (UCSD) 2002 - 2007: Ph.D in Electrical Engineering, Princeton University 1998 - 2002: B.Eng with Honours in Electrical Engineering, McGill University

Official source

Ontological neighbourhood

Physics

Condensed matter physics: Solid-state physics

Related concepts (19)

Bipolar junction transistor

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.

Depletion and enhancement modes

In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.

PIN diode

A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts. The wide intrinsic region is in contrast to an ordinary p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Diffusion

Diffusion is the net movement of anything (for example, atoms, ions, molecules, energy) generally from a region of higher concentration to a region of lower concentration. Diffusion is driven by a gradient in Gibbs free energy or chemical potential. It is possible to diffuse "uphill" from a region of lower concentration to a region of higher concentration, like in spinodal decomposition. Diffusion is a stochastic process due to the inherent randomness of the diffusing entity and can be used to model many real-life stochastic scenarios.

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