Network analysis (electrical circuits)In electrical engineering and electronics, a network is a collection of interconnected components. Network analysis is the process of finding the voltages across, and the currents through, all network components. There are many techniques for calculating these values; however, for the most part, the techniques assume linear components. Except where stated, the methods described in this article are applicable only to linear network analysis.
Dependent sourceIn the theory of electrical networks, a dependent source is a voltage source or a current source whose value depends on a voltage or current elsewhere in the network. Dependent sources are useful, for example, in modeling the behavior of amplifiers. A bipolar junction transistor can be modeled as a dependent current source whose magnitude depends on the magnitude of the current fed into its controlling base terminal. An operational amplifier can be described as a voltage source dependent on the differential input voltage between its input terminals.
Transistor modelTransistors are simple devices with complicated behavior. In order to ensure the reliable operation of circuits employing transistors, it is necessary to scientifically model the physical phenomena observed in their operation using transistor models. There exists a variety of different models that range in complexity and in purpose. Transistor models divide into two major groups: models for device design and models for circuit design. The modern transistor has an internal structure that exploits complex physical mechanisms.
Sampling biasIn statistics, sampling bias is a bias in which a sample is collected in such a way that some members of the intended population have a lower or higher sampling probability than others. It results in a biased sample of a population (or non-human factors) in which all individuals, or instances, were not equally likely to have been selected. If this is not accounted for, results can be erroneously attributed to the phenomenon under study rather than to the method of sampling.
Bipolar junction transistorA bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.
Diode modellingIn electronics, diode modelling refers to the mathematical models used to approximate the actual behaviour of real diodes to enable calculations and circuit analysis. A diode's I-V curve is nonlinear. A very accurate, but complicated, physical model composes the I-V curve from three exponentials with a slightly different steepness (i.e. ideality factor), which correspond to different recombination mechanisms in the device; at very large and very tiny currents the curve can be continued by linear segments (i.
Electrical mobilityElectrical mobility is the ability of charged particles (such as electrons or protons) to move through a medium in response to an electric field that is pulling them. The separation of ions according to their mobility in gas phase is called ion mobility spectrometry, in liquid phase it is called electrophoresis. When a charged particle in a gas or liquid is acted upon by a uniform electric field, it will be accelerated until it reaches a constant drift velocity according to the formula where is the drift velocity (SI units: m/s), is the magnitude of the applied electric field (V/m), is the mobility (m2/(V·s)).
Electron mobilityIn solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, .
CMOSComplementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.
Digital signalA digital signal is a signal that represents data as a sequence of discrete values; at any given time it can only take on, at most, one of a finite number of values. This contrasts with an analog signal, which represents continuous values; at any given time it represents a real number within a continuous range of values. Simple digital signals represent information in discrete bands of analog levels. All levels within a band of values represent the same information state.
GateA gate or gateway is a point of entry to or from a space enclosed by walls. The word derived from old Norse "gat" meaning road or path; But other terms include yett and port. The concept originally referred to the gap or hole in the wall or fence, rather than a barrier which closed it. Gates may prevent or control the entry or exit of individuals, or they may be merely decorative. The moving part or parts of a gateway may be considered "doors", as they are fixed at one side whilst opening and closing like one.
