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This lecture covers the removal and deposition of thin-films in CMOS technology, including wet and dry etching techniques, chemical mechanical polishing, and thin-film deposition methods. It explains the parameters of thin-film removal, such as etch rate, selectivity, anisotropy, and uniformity. The process of chemical vapor deposition and physical vapor deposition is detailed, along with examples of PVD by evaporation and sputtering. It also discusses the formation of thin-films, step coverage, and aspect ratio. The lecture concludes with an overview of process integration in CMOS technology, focusing on the front-end-of-line and back-end-of-line processes.