Lecture

Photodiodes: Operation and Characteristics

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MICRO-330: Sensors

Principes physiques et électronique utilisés dans les capteurs. Applications des capteurs. ...

Description

This lecture covers the operation and characteristics of photodiodes, including photovoltaic and photoconductive modes, measurement methods, junction capacity, sensitivity, and noise analysis. It explains the impact of reverse voltage, depletion region, and circuit components on photodiode performance. The lecture also delves into the absorption coefficient, quantum efficiency, and avalanche effect in photodiodes.

Instructors (3)

Philippe Renaud

Philippe Renaud is Professor at the Microsystem Laboratory (LMIS4) at EPFL. He is also the scientific director of the EPFL Center of MicroNanoTechnology (CMI). His main research area is related to micronano technologies in biomedical applications (BioMEMS) with emphasis on cell-chips, nanofluidics and bioelectronics. Ph. Renaud is invloved in many scientifics papers in his research area. He received his diploma in physics from the University of Neuchâtel (1983) and his Ph.D. degree from the University of Lausanne (1988). He was postdoctoral fellow at University of California, Berkeley (1988-89) and then at the IBM Zürich Research Laboratory in Switzerland (1990-91). In 1992, he joined the Sensors and Actuators group of the Swiss Center for Electronics and Microtechnology (CSEM) at Neuchâtel, Switzerland. He was appointed assistant professor at EPFL in 1994 and full professor in 1997. In summer 1996, he was visiting professor at the Tohoku University, Japan. Ph. Renaud is active in several scientific committee (scientific journals, international conferences, scientific advisory boards of companies, PhD thesis committee). He is also co-founder of the Nanotech-Montreux conference. Ph. Renaud is committed to valorization of basic research through his involvement in several high-tech start-up companies.

Giovanni Boero

Expertise Nuclear magnetic resonance (NMR), Electron spin resonance (ESR), Ferromagnetic resonance (FMR), RF/MW discrete and integrated electronics, Magnetic sensors, Noise phenomena. Mission Methods based on the magnetic resonance of nuclear spins (nuclear magnetic resonance (NMR)), unpaired electrons spins (electron spin resonance (ESR)), and coupled electron spins electrons (ferromagnetic resonance (FMR)) are very powerful radiofrequency/microwave spectroscopy tools used in many research and industrial a

Herbert Shea

Expertise soft robotics, wearable haptics, electrostatic actuators, EHD Mission My lab develops flexible polymer-based actuators for a wide range of applications including haptics and soft robotics. More info at https://www.epfl.ch/labs/lmts/ Links from EPFL-LMTS Lab webpage People Research ActivitiesPublications TeachingPublications and Conference papers Link to my lab Education PhD | Physics 1997 – 1997 Harvard University MA | Physics 1993 – 1993 Harvard University

Official source

Related concepts (32)

Photodiode

A photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.

Depletion and enhancement modes

In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.

Attenuation coefficient

The linear attenuation coefficient, attenuation coefficient, or narrow-beam attenuation coefficient characterizes how easily a volume of material can be penetrated by a beam of light, sound, particles, or other energy or matter. A coefficient value that is large represents a beam becoming 'attenuated' as it passes through a given medium, while a small value represents that the medium had little effect on loss. The SI unit of attenuation coefficient is the reciprocal metre (m−1).

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

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