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Lecture

Photodiodes: Operation and Characteristics

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MICRO-330: Sensors

Principes physiques et électronique utilisés dans les capteurs. Applications des capteurs. ...

Description

This lecture covers the operation and characteristics of photodiodes, including photovoltaic and photoconductive modes, measurement methods, junction capacity, sensitivity, and noise analysis. It explains the impact of reverse voltage, depletion region, and circuit components on photodiode performance. The lecture also delves into the absorption coefficient, quantum efficiency, and avalanche effect in photodiodes.

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Instructors (3)

Philippe Renaud

Philippe Renaud is Professor at the Microsystem Laboratory (LMIS4) at EPFL. He is also the scientific director of the EPFL Center of MicroNanoTechnology (CMI). His main research area is related to micronano technologies in biomedical applications (BioMEMS) with emphasis on cell-chips, nanofluidics and bioelectronics. Ph. Renaud is invloved in many scientifics papers in his research area. He received his diploma in physics from the University of Neuchâtel (1983) and his Ph.D. degree from the University of Lausanne (1988). He was postdoctoral fellow at University of California, Berkeley (1988-89) and then at the IBM Zürich Research Laboratory in Switzerland (1990-91). In 1992, he joined the Sensors and Actuators group of the Swiss Center for Electronics and Microtechnology (CSEM) at Neuchâtel, Switzerland. He was appointed assistant professor at EPFL in 1994 and full professor in 1997. In summer 1996, he was visiting professor at the Tohoku University, Japan. Ph. Renaud is active in several scientific committee (scientific journals, international conferences, scientific advisory boards of companies, PhD thesis committee). He is also co-founder of the Nanotech-Montreux conference. Ph. Renaud is committed to valorization of basic research through his involvement in several high-tech start-up companies.

Giovanni Boero

Herbert Shea

Official source

Related concepts (32)

Photodiode

A photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.

Depletion region

In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current.

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.

Avalanche photodiode

An avalanche photodiode (APD) is a highly sensitive semiconductor photodiode detector that exploits the photoelectric effect to convert light into electricity. From a functional standpoint, they can be regarded as the semiconductor analog of photomultiplier tubes. The avalanche photodiode (APD) was invented by Japanese engineer Jun-ichi Nishizawa in 1952. However, study of avalanche breakdown, microplasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent.

Photodetector

Photodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically photo detector have a p–n junction that converts light photons into current. The absorbed photons make electron–hole pairs in the depletion region.

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