Lecture

Intermolecular Delocalization

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In course

MSE-486: Organic electronic materials

This course will introduce students to the field of organic electronic materials. The goal of this course is to discuss the origin of electronic properties in organic materials, charge transport mechanisms, chemical synthesis, materials processing, and dev ...

Description

This lecture covers the concept of intermolecular delocalization in organic materials, discussing the effects of dynamic and static disorder on charge carriers in solid-state systems. It also explores the behavior of crystalline organic materials at high charge carrier densities and heterogeneous systems. Additionally, the lecture delves into the active regions in p-type and n-type organic semiconductors, highlighting the learning outcomes related to charge carriers, solitons, and polaron charge carriers.

Instructor

Holger Frauenrath

Holger Frauenrath (born in Aachen, Germany) studied chemistry at RWTH Aachen , Germany from 1992 to 1997, with a focus on synthetic organic chemistry. He performed his PhD thesis from 1998 to 2001 in the research group of Prof Hartwig Höcker at RWTH Aachen, working on a project related to the stereospecific polymerization of methacrylates as well as their copolymerization with olefins using zirconocene catalysts. Holger Frauenrath then joined the group of Prof. Sam Stupp at Northwestern University , Evanston, IL, USA, as a postdoctoral fellow supported by a Feodor Lynen fellowship of the Alexander von Humboldt Foundation . His postdoctoral research projects were centered around the supramolecular self-assembly of rod-coil molecules. Holger Frauenrath returned to Germany in 2003 and started to build his own research group at FU Berlin, funded with an Emmy Noether Grant from the German Science Foundation . In 2005, the research group moved to the Department of Materials at ETH Zurich , Switzerland, where it became a scientifcally independent part of the Polymer Chemistry Group led by Prof. A. Dieter Schlüter . Holger Frauenrath obtained his Habilitation from ETH Zurich in 2009. In 2009, Holger Frauenrath has been appointed as a professor at the Institute of Materials (IMX) of the Ecole Polytechnique Federale de Lausanne (EPFL) , Switzerland, building the new Laboratory of Macromolecular and Organic Materials (LMOM) . In the same year, Holger Frauenrath was received the prestigious European Research Council (ERC) Starting Investigator grant.

Official source

Ontological neighbourhood

Physics

Condensed matter physics: Solid-state physics

Related concepts (29)

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

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