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Lecture

Memory Cells Evolution

In course

EE-530: Test of VLSI systems

Test of VLSI Systems covers theoretical knowledge related to the major algorithms used in VLSI test, and design for test techniques. Basic knowledge related to computer-aided design for test techniques, and their integration into a design-flow are presente ...

Description

This lecture discusses the historical evolution of memory cells per chip, following Moore's Law, and the increasing importance of memory in semiconductor markets. It covers the architecture of SRAM and DRAM, memory testing techniques, fault models like SAF, TF, DRF, CF, and NPSF, and March tests concepts. The instructor explains the GALPAT and walking 1/0 tests, linked faults, and masking in memory testing.

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Instructor

Alexandre Schmid

Alexandre Schmid received the M.Sc. degree in microengineering and the Ph.D. degree in electrical engineering from the Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland, in 1994 and 2000, respectively. Since 1994, he has been with the EPFL, working with the Integrated Systems Laboratory as a Research and Teaching Assistant, and with the Electronics Laboratories as a Postdoctoral Fellow. In 2002, he was a Senior Research Associate with the Microelectronic Systems Laboratory, where he has been conducting research in the fields of bioelectronic interfaces and implantable biomedical electronics, nonconventional signal processing and neuromorphic hardware, and reliability of nanoelectronic devices, and also teaches with the Microengineering and Electrical Engineering Departments of EPFL. Since 2011, he is a Maître d'Enseignement et de Recherche (MER) Faculty Member with EPFL. He is a coauthor of two books, Reliability of Nanoscale Circuits and Systems, Methodologies and Circuit Architectures, Springer, 2011, and Wireless Cortical Implantable Systems, Springer, 2013, and a coeditor of one book, as well as over 100 articles published in journals and conferences. Dr. Schmid has served as the General Chair of the Fourth International Conference on Nano-Networks in 2009 and has been serving as an Associate Editor of the Institute of Electrical, Information, and Communication Engineers Electronics Express since 2009.

Official source

Ontological neighbourhood

Computer engineering

Computer architecture: Embedded systems

Related concepts (32)

Memory cell (computing)

The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory.

Computer memory

Computer memory stores information, such as data and programs for immediate use in the computer. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store. Computer memory operates at a high speed compared to storage which is slower but less expensive and higher in capacity. Besides storing opened programs, computer memory serves as disk cache and write buffer to improve both reading and writing performance.

Dynamic random-access memory

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.

Memory

Memory is the faculty of the mind by which data or information is encoded, stored, and retrieved when needed. It is the retention of information over time for the purpose of influencing future action. If past events could not be remembered, it would be impossible for language, relationships, or personal identity to develop. Memory loss is usually described as forgetfulness or amnesia. Memory is often understood as an informational processing system with explicit and implicit functioning that is made up of a sensory processor, short-term (or working) memory, and long-term memory.

Flash memory

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

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