Lecture

Doped Semiconductors

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In course

MSE-484: Properties of semiconductors and related nanostructures

This course explains the origin of optical and electrical properties of semiconductors. The course elaborates how they change when the semiconductors are reduced to sizes of few nanometers. The course provides also the basis to use software to calculate th ...

Description

This lecture covers the concept of doped semiconductors, discussing heterostructuring, gate voltage tuning, doping mechanisms, intrinsic and extrinsic semiconductors, and the formation of impurity bands in the context of semiconductor physics.

Instructors (2)

Anna Fontcuberta i Morral

2014 Associate Professor at the Institut des Matériaux, EPFL 2008 Assistant Professor Tenure Track at the Institut des Matériaux, EPFL 2009 Habilitation in Physics, Technische Universität München 2005-2010 Marie Curie Excellence Grant Team Leader at Walter Schottky Institut, Technische Universität München, on leave from Centre National de la Recherche Scientifique (CNRS, France) 2004-2005 Visiting Scientist at the California Institute of Technology, on leave from CNRS; Senior Scientist and co-founder of Aonex Technologies (a startup company for large area layer transfer of InP and Ge on foreign substrates for the main application of multi-junction solar cells) 2003 Permanent Research Fellow at CNRS, Ecole Polytechnique, France 2001-2002 Postdoctoral Scholar at the California Institute of Technology Study of wafer bonding and hydrogen-induced exfoliation processes for integration of mismatched materials in views of photovoltaic applications Sponsor: Professor Harry A. Atwater 1998-2001 PhD in Materials Science, Ecole Polytechnique Study of polymorphous silicon: growth mechanisms, optical and structural properties. Application to Solar Cells and Thin Film Transistors Advisor: Pere Roca i Cabarrocas 1997-1998 Diplôme dEtudes Approfondis (D.E.A.) in Materials Science at Université Paris XI, France . 1993-1997 BA in Physics at Universitat de Barcelona

Valerio Piazza

Teaching & PhD PhD Students Claire Valentine Blaga, Matilde Cantele, Julia Sarah Marhic Past EPFL PhD Students as codirector Michele Zendrini Courses Functional properties of materials MSE-210 The main objective of this course is to present the concepts allowing the understanding of the fundamental principles that enable to predict the properties of the materials. The goal is that with these concepts, one will be able to realize material design and/or to understand novel materials.

Official source

Related concepts (20)

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Magnetic semiconductor

Magnetic semiconductors are semiconductor materials that exhibit both ferromagnetism (or a similar response) and useful semiconductor properties. If implemented in devices, these materials could provide a new type of control of conduction. Whereas traditional electronics are based on control of charge carriers (n- or p-type), practical magnetic semiconductors would also allow control of quantum spin state (up or down).

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

Heterojunction

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.

Wide-bandgap semiconductor

Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.

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