TransistorA transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.
Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Bipolar junction transistorA bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.
History of the transistorA transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Transistor countThe transistor count is the number of transistors in an electronic device (typically on a single substrate or "chip"). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in the cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observed that the transistor count doubles approximately every two years.
Point-contact transistorThe point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicist William Shockley. The group had been working together on experiments and theories of electric field effects in solid state materials, with the aim of replacing vacuum tubes with a smaller device that consumed less power.
MESFETA MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate. MESFETs are constructed in compound semiconductor technologies lacking high quality surface passivation, such as gallium arsenide, indium phosphide, or silicon carbide, and are faster but more expensive than silicon-based JFETs or MOSFETs.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
Ocean currentAn ocean current is a continuous, directed movement of seawater generated by a number of forces acting upon the water, including wind, the Coriolis effect, breaking waves, cabbeling, and temperature and salinity differences. Depth contours, shoreline configurations, and interactions with other currents influence a current's direction and strength. Ocean currents are primarily horizontal water movements. An ocean current flows for great distances and together they create the global conveyor belt, which plays a dominant role in determining the climate of many of Earth's regions.
Bipolar disorderBipolar disorder, previously known as manic depression, is a mental disorder characterized by periods of depression and periods of abnormally elevated mood that each last from days to weeks. If the elevated mood is severe or associated with psychosis, it is called mania; if it is less severe, it is called hypomania. During mania, an individual behaves or feels abnormally energetic, happy or irritable, and they often make impulsive decisions with little regard for the consequences.
P–n junctionA p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.
Saturation velocitySaturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property.
Insulated-gate bipolar transistorAn insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range.
Outline of bipolar disorderThe following outline is provided as an overview of and topical guide to bipolar disorder: Bipolar disorder – mental disorder with cyclical periods of depression and periods of elevated mood. The elevated mood is significant and is known as mania, a severe elevation that can be accompanied by psychosis in some cases, or hypomania, a milder form of mania. During mania, an individual behaves or feels abnormally energetic, elated, or irritable. Individuals often make poorly thought out decisions with little regard to the consequences.
Bipolar disorder not otherwise specifiedBipolar disorder not otherwise specified (BD-NOS) is a diagnosis for bipolar disorder (BD) when it does not fall within the other established sub-types. Bipolar disorder NOS is sometimes referred to as subthreshold bipolar disorder. BD-NOS is a mood disorder and one of four subtypes on the bipolar spectrum, which also includes bipolar I disorder, bipolar II disorder, and cyclothymia. BD-NOS was a classification in the DSM-IV and has since been changed to Bipolar "Other Specified" and "Unspecified" in the 2013 released DSM-5 (American Psychiatric Association, 2013).
Boundary currentBoundary currents are ocean currents with dynamics determined by the presence of a coastline, and fall into two distinct categories: western boundary currents and eastern boundary currents. Eastern boundary currents are relatively shallow, broad and slow-flowing. They are found on the eastern side of oceanic basins (adjacent to the western coasts of continents). Subtropical eastern boundary currents flow equatorward, transporting cold water from higher latitudes to lower latitudes; examples include the Benguela Current, the Canary Current, the Humboldt (Peru) Current, and the California Current.
Bipolar II disorderBipolar II disorder (BP-II) is a mood disorder on the bipolar spectrum, characterized by at least one episode of hypomania and at least one episode of major depression. Diagnosis for BP-II requires that the individual must never have experienced a full manic episode. Otherwise, one manic episode meets the criteria for bipolar I disorder (BP-I). Hypomania is a sustained state of elevated or irritable mood that is less severe than mania yet may still significantly affect the quality of life and result in permanent consequences including reckless spending, damaged relationships and poor judgment.
Electric currentAn electric current is a flow of charged particles, such as electrons or ions, moving through an electrical conductor or space. It is defined as the net rate of flow of electric charge through a surface. The moving particles are called charge carriers, which may be one of several types of particles, depending on the conductor. In electric circuits the charge carriers are often electrons moving through a wire. In semiconductors they can be electrons or holes.
Kuroshio CurrentThe Kuroshio Current, also known as the Black or Japan Current or the Black Stream, is a north-flowing, warm ocean current on the west side of the North Pacific Ocean basin. It was named for the deep blue appearance of its waters. Similar to the Gulf Stream in the North Atlantic, the Kuroshio is a powerful western boundary current that transports warm equatorial water poleward and forms the western limb of the North Pacific Subtropical Gyre. Off the East Coast of Japan, it merges with the Oyashio Current to form the North Pacific Current.
