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Lecture

Ampli à Bipolaire: Fréquentielle Analysis

In course

EE-203: Electronics II

Ce cours introduit les composants à semiconducteurs électroniques de base : diodes à jonction PN, transistors bipolaires et MOS. Leurs modes de fonctionnement en DC et AC sont étudiés. Les circuits élémentaires à base de transistors bipolaires sont prése ...

Description

This lecture covers the analysis of bipolar amplifiers, focusing on the frequency response. Topics include high and low frequency responses, common base and common collector configurations, access resistances, dominant poles, and the impact of capacitive coupling on amplifier performance.

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Instructors (3)

Stéphanie P. Lacour holds the Bertarelli Foundation Chair in Neuroprosthetic Technology in the School of Engineering at EPFL and leads the Laboratory for Soft Bioelectronic Interfaces. She received her PhD in Electrical Engineering from INSA de Lyon, France, and completed postdoctoral research at Princeton University and the University of Cambridge. She is the recipient of the 2006 MIT TR35, a University Research Fellowship of the Royal Society, European Research Council ERC Starting and POC Grants, and a SNSF-ERC Consolidator Grant. She was elected a 2015 Young Global Leader by the World Economic Forum.

Official source

Ontological neighbourhood

Physics

Electromagnetism: Electrical networks

Information engineering

Signal processing: Filtering theory

Related concepts (32)

Bipolar junction transistor

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.

Amplifier

An amplifier, electronic amplifier or (informally) amp is an electronic device that can increase the magnitude of a signal (a time-varying voltage or current). It is a two-port electronic circuit that uses electric power from a power supply to increase the amplitude (magnitude of the voltage or current) of a signal applied to its input terminals, producing a proportionally greater amplitude signal at its output. The amount of amplification provided by an amplifier is measured by its gain: the ratio of output voltage, current, or power to input.

Low-pass filter

A low-pass filter is a filter that passes signals with a frequency lower than a selected cutoff frequency and attenuates signals with frequencies higher than the cutoff frequency. The exact frequency response of the filter depends on the filter design. The filter is sometimes called a high-cut filter, or treble-cut filter in audio applications. A low-pass filter is the complement of a high-pass filter. In optics, high-pass and low-pass may have different meanings, depending on whether referring to the frequency or wavelength of light, since these variables are inversely related.

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

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