A high-power LED-based illumination system has been developed as a replacement for the mercury arc lamps used in mask-aligner lithography. LEDs are arranged in a grid array and placed in the entrance aperture of individual reflectors. Those reflectors decr ...
A smart luminaire able to change the direction of its light beam is installed in an office environment and compared to the available LEDs fixtures. Standard lighting measures are performed and a controlled user experiment is conducted, involving 22 subject ...
The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phas ...
We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...
Advances in renewable and sustainable energy technologies critically depend on our ability to design and realize materials with optimal properties. Materials discovery and design efforts ideally involve close coupling between materials prediction, synthesi ...
Indoor photovoltaics are promising to enable self-powered electronic devices for the Internet of Things. Here, reported is a triple-anion CH3NH3PbI2-xBrClx perovskite film, of which the bandgap is specially designed for indoor light harvesting to achieve a ...
Since the seminal report about the first Candela- class-brightness InGaN blue light- emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...
