Publication

Electroluminescence of Single InGaN/GaN Micropyramids

Gwénolé Jean Jacopin
2019
Journal Articles

Abstract

The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520-590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.

Official source

https://infoscience.epfl.ch/entities/publication/701c7220-0b80-4923-8444-4094e524e481

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Electroluminescence of Single InGaN/GaN Micropyramids

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