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Concept

Audio power amplifier

Related publications (26)

Amorphous Silicon Based Microchannel Plates for Time-of-Flight Positron Emission Tomography

Samira Alexandra Frey

Microchannel plates fabricated from hydrogenated amorphous silicon (AMCPs) are a promising alternative to conventional lead glass microchannel plates. Their main advantages lie in their cheaper and more flexible fabrication processes, allowing for adaptabl ...

EPFL2023

Ultra-Low Power Short-Range 60-GHz FMCW Radar Front-End

Sammy Cerida Rengifo

The millimeter wave (mmWave) frequency band is becoming very interesting over the past years because it provides the opportunity to operate using large bandwidths which are not available at lower frequencies. This enables new communication standards suppor ...

EPFL2023

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of n ...

Institute of Electrical and Electronics Engineers2022

A Cryo-CMOS Wideband Quadrature Receiver With Frequency Synthesizer for Scalable Multiplexed Readout of Silicon Spin Qubits

Edoardo Charbon, Andrea Ruffino, Yatao Peng

In this article, a cryo-CMOS receiver integrated with a frequency synthesizer for scalable multiplexed readout of qubits is presented, focusing on radio frequency (RF) reflectometry readout of silicon-based semiconductor spin qubits/quantum dots. The propo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Emanuele Ripiccini, Andrada Alexandra Muntean, Esteban Venialgo Araujo

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications

Edoardo Charbon

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-en ...

IOP Publishing Ltd2021

Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars

Christian Enz, Francesco Chicco, Sammy Cerida Rengifo

This work presents the design of a 24-GHz digitally controlled oscillator (DCO) in an advanced 28-nm bulk CMOS technology for short-range frequency-modulated continuous-wave radar system-on-chip for mobile and Internet-of-Things devices. The power minimiza ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Method and apparatus for volumetric additive manufacturing with digital distortion compensation

Christophe Moser, Damien Claude-Marie Loterie, Paul Delrot

The present invention is related to a method of digitally compensating distortions of rays of a light beam in tomography- based additive manufacturing, wherein said tomography-based additive manufacturing involves projecting light patterns from multiple an ...

2021

Performance of chip-scale optical frequency comb generators in coherent WDM communications

Tobias Kippenberg

Optical frequency combs have the potential to become key building blocks of wavelength-division multiplexing (WDM) communication systems. The strictly equidistant narrow-band spectral lines of a frequency comb can serve either as carriers for parallel WDM ...

2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Response of noise-amplifier flows: From linear control to nonlinear jet breakup

Isha Shukla

Among hydrodynamically unstable flows, the amplifier-flows are characterized by their large amplification potential in presence of external noise. Since amplifiers do not have an intrinsic dynamics, a chosen forcing can be applied to eventually control the ...

EPFL2019

Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling

Gunjan Agarwal

In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for ...

American Society of Mechanical Engineers2017

Digital Predistortion of Power Amplifier Non-Linearities for Full-Duplex Transceivers

Andreas Peter Burg, Alexios Konstantinos Balatsoukas Stimming, Andrew Charles Mallory Austin

Non-linearities introduced by the power amplifier stage can significantly reduce the performance of self-interference cancellation in full-duplex transceivers. Accordingly, we propose a full-duplex system architecture that predistorts the digital baseband ...

Ieee2016

A remotely powered fully integrated low power class-E power amplifier for implantable sensor systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a fully integrated low power class-E power amplifier and its integration to remotely powered sensor system. The on-chip 1.2 GHz power amplifier is implemented in 0.18 A mu m CMOS process with 0.2 V supply. The implantable system is powe ...

Springer2016

Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits

Christian Enz, Alessandro Pezzotta

This paper presents the simplified charge-based EKV MOSFET model and shows that it can be used for advanced CMOS processes despite its very few parameters. The concept of inversion coefficient is then presented as an essential design parameter that spans t ...

IEEE2016

A 2.4-GHz low complexity polar transmitter using dynamic biasing for IEEE 802.15.6

Christian Enz, Vladimir Kopta, Raghavasimhan Thirunarayanan

A 2.4 GHz polar transmitter compliant with the IEEE 802.15.6 standard is presented in this paper. A Linearized class-C power amplifier, employing dynamic biasing is used to minimize the adjacent channel interference and satisfy the defined spectrum mask re ...

IEEE2015

A closed-form expression for the total degradation in OFDM systems

Stefano Rosati

In this paper, building upon Bussgang's theorem, we present a new expression for the total degradation (TD) in OFDM systems. This novel expression is applicable to any high power amplifier (HPA) model. In case of ideal clipping HPA model and for particular ...

Wiley-Blackwell2015

A Low Power On-Chip Class-E Power Amplifier For Remotely Powered Implantable Sensor Systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the req ...

Spie-Int Soc Optical Engineering2015

A broadband single-chip transceiver for multi-nuclear NMR probes

Giovanni Boero, Marco Grisi, Gabriele Gualco

In this article, we present an integrated broadband complementary metal-oxide semiconductor single-chip transceiver suitable for the realization of multi-nuclear pulsed nuclear magnetic resonance (NMR) probes. The realized single-chip transceiver can be in ...

American Institute of Physics2015

Sensitivity and open-loop control of stochastic response in a noise amplifier flow: the backward-facing step

François Gallaire, Edouard Boujo

The two-dimensional backward-facing step flow is a canonical example of noise amplifier flow: global linear stability analysis predicts that it is stable, but perturbations can undergo large amplification in space and time as a result of non-normal effects ...

Cambridge University Press2015