Publications related to Trimethylgallium

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Advantages and remaining issues of state-of-the-art m-plane freestanding GaN (FS-GaN) substrates grown by halide vapor phase epitaxy (HVPE) for m-plane InGaN epitaxial film growth by metalorganic vapor phase epitaxy are described. Because of the low threading dislocation and basal-plane stacking fault densities, improved quantum efficiency and short radiative lifetime are achieved for the near-band-edge emission of 200–250 nm thick m-plane pseudomorphic InGaN epilayers. As the surface flatness is greatly im

Vacancies, antisites, and dangling bonds in GaAs and In0.5Ga0.5As are studied through hybrid density functionals. The As antisite is found to have a low formation energy in As-rich conditions and defect levels at mid-gap in correspondence of experimental defect densities at the GaAs/oxide and InGaAs/oxide interfaces. In n-type GaAs, the Ga vacancy also shows defect levels in agreement with measured defect densities and competitive formation energies. For both GaAs and InGaAs, the As dangling bonds are locat

We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorporation and photoluminescence efficiency is achieved with such optimized QW structures. Possible mechanisms of the observed increase in N uptake and reduction in defect density, related to the substrate vicinality, are discussed.

The effect of the miscut angle of vicinal substrate on the optical and morphological properties of GaAs/AlxGa1-xAs quantum wells grown by metalorganic vapor phase epitaxy is studied by means of photoluminescence (PL) and atomic force microscopy. Within small changes of the miscut angle, we observe strong variations of the PL linewidth, energy, and lineshape, as well as transitions between the morphology of the sample's surface and interface. The relation between these features is discussed, and the particul

AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and starts to be studied intensively mainly for electronic applications. The aim of this work is manifold. Var ...

In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...

We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with an Al content around x similar to 0.17 are lattice matched to GaN, thus avoiding strain-related issues in the subsequent active layers while keeping a high refractive index contrast of 7%, comparable to that achievable in the Al0.5Ga0.5N/GaN system. Device

We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast relative to GaN is around 7% for wavelengths ranging from 950 to 450 nm. We demonstrate the growth of a crack-free, 20 pairs Al0.84In0.16N/GaN distributed Bragg reflector centered at 515 nm with an over 90% reflectivity and a 35 nm stop band. The growth of

Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with interruptions during the InxGa1-xN layer growth. The strain distribution is not homogeneous inside the quantum wells, and indium rich clusters can be observed. Areas with almost no indium concentration were observed corresponding to the growth interruption.

The adduct obtained upon consecutive treatment of 1,4-dienes with butyllithium in the presence of potassium tert-butoxide, chlorotri(isopropyloxy)titanium and a carbonyl compd. contains the a-hydroxyalkyl group invariably and exclusively linked to the 3-position of the former diene. When chlorotri(isopropyloxy)titanium is replaced by the Duthaler-Hafner reagent [(4R,5R)-chloro(cyclopentadienyl)(2,2-dimethyl-a,a,a',a'-tetraphenyl-1,3-dioxolane-4,5-dimethanolato-O,Oa)titanium] the reaction does not only occur

A comprehensive study of: leakage conduction in Pb(ZrxTi1-x)O-3 films with Pt electrodes is carried out. The conduction properties of films prepared in different ways (sol-gel coating, metalorganic chemical vapor deposition, sputtering) were studied by using different experimental techniques including variation of the applied voltage profile, photoassisted measurements, measurements at elevated temperatures, and variation of the prehistory of the samples. Based on the collective data, it is concluded that t

In order to investigate the dramatic enhancement of the oxidation rate of semiconductor materials, promoted by an alkali-metal overlayer, we exposed a GaAs(110) surface covered by a monolayer of Cs to oxygen, observing the photoemission spectra of As 2p, Ga 2p, Cs 4d, and O Is. We show evidence that the oxidation mechanism proceeds through (i) oxygen infiltration underneath the Cs monolayer; (ii) disruption of low-binding-energy bonds Cs-As and Cs-Ga established at the Cs/GaAs(110) interface before the expo

Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We present the results of GaP growth with the TMGa-TMN adduct. Photoluminscence at 2 K clearly detects nitrogen as a substitutional dopant. Considering the luminescence features the nitrogen concentration was estimated to be about 10(16)-10(17) cm-3. The residual c

Laser direct writing of metal lines from solid metalorg. films coated on surfaces has been studied in three systems. Copper deposition from Cu(HCOO)2.2H2O was carried out at higher writing speeds than previously attained. Direct writing of iridium lines from two novel Ir-cluster films [Ir4(CO)11Br][N(C2H5)4] and [Ir6(CO)15][N(CH3)3C8H17]2 was demonstrated. The copper and iridium lines were written on Pyrex. It was found that inhomogeneities in the metalorg. layer are crucial to the quality of the deposited

Trimethylgallium

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Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Intrinsic defects in GaAs and In GaAs through hybrid functional calculations

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

Physics and applications of intersubband transitions in nitride based heterostructures

InGaN/GaN resonant-cavity LED including an AlInN/GaN bragg mirror

High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

Indium distribution inside quantum wells: The effect of growth interruption in MBE

Pentadienyltitaniums as versatile intermediates: regio- and stereo-selectivities

Space-charge influenced injection model for conduction in Pb(ZrxTi1-x)O-3 thin films

Catalytic oxidation of the GaAs(110) surface promoted by a Cs overlayer

Movpe Growth and Properties of Gap Using Nitrogen Bridged Adduct

Fast laser writing of copper and iridium lines from thin solid surface layers of metalorganic compounds